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BC239C

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size92KB,2 Pages
ManufacturerBytesonic Corporation
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Transistor

BC239C Parametric

Parameter NameAttribute value
MakerBytesonic Corporation
package instruction,
Reach Compliance Codeunknown
TO-92 Plastic-Encapsulate Transistors
BC237/238/239
FEATURES
Power dissipation
P
CM:
Collector current
I
CM:
Collector-base voltage
V
(BR)CBO
:
0.35
W (Tamb=25℃)
2.
BASE
TRANSISTOR (NPN)
TO-92
1.
COLLECTOR
0.1
A
3.
EMITTER
BC237
50V
BC238/239
30V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
unless otherwise specified)
Test
conditions
BC237
BC238/239
BC237
BC238/239
BC237
BC238/239
BC237
BC238/239
MIN
TYP
MAX
UNIT
V
V
V
Ic=100µA, I
E
=0
Ic=
2
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
50
V, I
E
=0
V
CB
=3
0
V, I
E
=0
50
30
45
25
6
5
15
15
90
150
270
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
nA
nA
V
EB
=
5
V, I
C
=0
V
CE
=5V, I
C
=
10
µA
BC237A
BC237B/238B
BC237C/238C/239C
V
CE
=
5
V, I
C
=
2
mA
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
V
CE
=5V, I
C
=
100m
A
BC237A
BC237B/238B
BC237C/238C/239C
I
C
=10mA, I
B
=
0.5
mA BC237/238/239
h
FE(1)
DC current gain
h
FE(2)
120
120
120
200
380
170
290
500
120
180
300
800
800
220
460
800
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=
5
mA
BC237/239
BC238
0.2
0.6
0.8
V
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