SOT-23 Plastic-Encapsulate Transistors
BC846ALT1, BLT1
TRANSISTOR (NPN)
BC847ALT1, BLT1 CLT1
BC848ALT1, BLT1 CLT1
FEATURES
Power dissipation
P
CM:
0.225
W (Tamb=25℃) Note1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
1. 0
Collector current
I
CM:
0.1
A
Collector-base voltage
V
CBO
:
BC846 80 V
BC847 50 V
BC848 30 V
Operating and storage junction temperature range
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
T
J
, T
stg
: -55℃ to +150℃
Note1: Transistor mounted on an FR4 Printed-circuit board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C/BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
I
C
=100mA, I
B
= 5 mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
H
FE(1)
V
CE
= 5V, I
C
= 2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= 10
µ
A, I
C
=0
V
CB
= 70V, I
E
=0
V
CB
= 50V, I
E
=0
V
CB
= 30V, I
E
=0
V
CE
= 60V, I
B
=0
V
CE
= 45V, I
B
=0
V
CE
= 30V, I
B
=0
V
EB
= 5V, I
C
=0
110
200
420
0.1
220
450
800
0.5
1.1
V
V
0.1
0.1
V
CEO
Ic= 10mA, I
B
=0
V
CBO
Ic= 10
µ
A, I
E
=0
Symbol
Test
conditions
MIN
80
50
30
65
45
30
6
V
V
V
MAX
UNIT
0. 4
µ
A
µ
A
µ
A
Transition frequency
f
T
f=
100MHz
100
MHz
DEVICE MARKING
BC846ALT1=1A; BC846BLT1=1B; BC847ALT1=1E;BC847BLT1=1F;BC847CLT1=1G; BC848ALT1=1J; BC848BLT1=1K
BC848CLT1=1L
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