ZTE1.5 thru ZTE2.4
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode
ring is to be connected: ZTE1.5 and ZTE2 to the
negative pole of the supply voltage; ZTE2.4 to the
positive pole of the supply voltage
• These diodes are also available in MiniMELF
case with the type designation LL1.5 … LL 2.4.
min. 1.083 (27.5)
max. .150 (3.8)
max.
∅
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
Mechanical Data
max.
∅
.020 (0.52)
Dimensions are in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
Maximum Ratings
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
Power dissipation at T
amb
= 25°C
Junction temperature
Storage temperature range
I
F
P
tot
T
J
T
S
100
300
(1)
150
– 55 to +150
mA
mW
°C
°C
Electrical and Thermal Characteristics
Parameter
Forward Voltage at I
F
= 10 mA
Temperature Coefficient of the
stabilized voltage at I
Z
= 5 mA
Thermal resistance junction to ambient air
ZTE1.5, ZTE2
ZTE2.4
(T
A
= 25°C unless otherwise noted)
Symbol
V
F
Min.
–
–
–
–
Typ.
–
–26
–34
–
Max.
1.1
–
–
0.4
(1)
Unit
V
10
–4
/°C
10
–4
/°C
°C/W
α
VZ
α
VZ
R
θJA
Type
ZTE1.5
ZTE2
ZTE2.4
Operating Voltage
at I
Z
= 5mA
(2)
V
Z
(V)
1.35 ... 1.55
2.0 ... 2.3
2.2 ... 2.56
Dynamic resistance
at I
Z
= 5mA
r
zj
(Ω)
13(<20)
18(<30)
14(<20)
Permissable operating current
at T
amb
= 25°C
(1)
I
Z
max. (mA)
120
120
120
7/7/00
Notes:
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses t
p
= 5ms
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