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MV2105

Description
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Abrupt, TO-226AC
CategoryDiscrete semiconductor    diode   
File Size139KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

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MV2105 Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Abrupt, TO-226AC

MV2105 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionO-PBCY-T2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.5
Nominal diode capacitance15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeTO-226AC
JESD-30 codeO-PBCY-T2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Maximum power dissipation0.28 W
Certification statusNot Qualified
minimum quality factor400
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.1 µA
Reverse test voltage25 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Varactor Diode ClassificationABRUPT

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Index Files: 1718  2915  1554  646  1103  35  59  32  13  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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