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KSH200-I

Description
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size125KB,3 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KSH200-I Overview

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

KSH200-I Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)65 MHz

KSH200-I Related Products

KSH200-I KSH200
Description Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
Maker SAMSUNG SAMSUNG
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 25 V 25 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 10 10
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 65 MHz 65 MHz
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