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EDS1216CATA-75-E

Description
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54,
Categorystorage    storage   
File Size622KB,49 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

EDS1216CATA-75-E Overview

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54,

EDS1216CATA-75-E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTSOP, TSOP54,.46,32
Reach Compliance Codecompliant
Maximum access time5.4 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of terminals54
word count8388608 words
character code8000000
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.22 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
DATA SHEET
128M bits SDRAM
EDS1216AATA, EDS1216CATA
(8M words
×
16 bits)
Description
The EDS1216AATA, EDS1216CATA are 128M bits
SDRAMs organized as 2,097,152 words
×
16 bits
×
4
banks. All inputs and outputs are synchronized with
the positive edge of the clock.
Supply voltages are 3.3V (EDS1216AATA) and 2.5V
(EDS1216CATA).
They are packaged in 54-pin plastic TSOP (II).
Pin Configurations
/xxx indicate active low signal.
54-pin Plastic TSOP (II)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
Features
3.3V and 2.5V power supply
Clock frequency: 133MHz (max.)
Single pulsed /RAS
×16
organization
4 banks can operate simultaneously and
independently
Burst read/write operation and burst read/single
write operation capability
2 variations of burst sequence
Sequential (BL = 1, 2, 4, 8, full page)
Interleave (BL = 1, 2, 4, 8)
Programmable /CAS latency (CL): 2, 3
Byte control by UDQM and LDQM
Refresh cycles: 4096 refresh cycles/64ms
2 variations of refresh
Auto refresh
Self refresh
TSOP (II) package with lead free solder (Sn-Bi)
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
(Top view)
A0 to A11
BA0, BA1
DQ0 to DQ15
/CS
/RAS
/CAS
/WE
LDQM, UDQM
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
Address input
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
Input/output mask
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0411E30 (Ver. 3.0)
Date Published July 2004 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2003-2004

EDS1216CATA-75-E Related Products

EDS1216CATA-75-E EDS1216CATA-7B-E
Description Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54,
Is it Rohs certified? conform to conform to
Maker Micron Technology Micron Technology
package instruction TSOP, TSOP54,.46,32 TSOP, TSOP54,.46,32
Reach Compliance Code compliant compliant
Maximum access time 5.4 ns 5.4 ns
Maximum clock frequency (fCLK) 133 MHz 133 MHz
I/O type COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 R-PDSO-G54
memory density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 16
Number of terminals 54 54
word count 8388608 words 8388608 words
character code 8000000 8000000
Maximum operating temperature 70 °C 70 °C
organize 8MX16 8MX16
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP TSOP
Encapsulate equivalent code TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
power supply 2.5 V 2.5 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A
Maximum slew rate 0.22 mA 0.22 mA
Nominal supply voltage (Vsup) 2.5 V 2.5 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL

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