JANTX2N2222AUBT/R datasheet, PDF

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JANTX2N2222AUBT/R: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size58KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTX2N2222AUBT/R Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

JANTX2N2222AUBT/R Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-CDSO-N3
Number of components	1
Number of terminals	3
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Guideline	MIL-19500/255
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	300 ns
Maximum opening time (tons)	35 ns

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TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

Devices

2N2221A

2N2221AL

2N2221AUA

2N2221AUB

Qualified Level

JAN

JANTX

JANTXV

JANS

JANHC

2N2222A

2N2222AL

2N2222AUA

2N2222AUB

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ T

= +25

2N2221A, L; 2N2222A, L

(1)

2N2221AUA; 2N2222AUA

(2)

2N2221AUB; 2N2222AUB

(1)

Operating & Storage Junction Temperature Range

Symbol

CEO

CBO

EBO

stg

Symbol

All Types

6.0

800

0.5

0.65

0.50

-65 to +200

Max.

325

210

325

Unit

Vdc

mAdc

TO-18* (TO-206AA)

2N2221A, 2N2222A

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Ambient

2N2221A, L; 2N2222A, L

2N2221AUA; 2N2222AUA

2N2221AUB; 2N2222AUB

1) Derate linearly 3.08 mW/

C above T

> +37.5

2) Derate linearly 4.76 mW/

C above T

> +63.5

Unit

4 PIN*

2N2221AUA, 2N2222AUA

C/W

3 PIN*

2N2221AUB, 2N2222AUB

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Characteristics

Symbol

(BR)

CEO

CBO

Min.

Max.

Unit

Vdc

µAdc

ηAdc

µAdc

ηAdc

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 10 mAdc

Collector-Base Cutoff Current

= 75 Vdc

= 60 Vdc

Emitter-Base Cutoff Current

= 6.0 Vdc

= 4.0 Vdc

Collector-Base Cutoff Current

= 50 Vdc

EBO

CES

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANTX2N2222AUBT/R Related Products

	JANTX2N2222AUBT/R	JANHC2N2222AL	JANHC2N2222AUA	JANHC2N2222AUB	JANHC2N2222A
Description	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
package instruction	SMALL OUTLINE, R-CDSO-N3	CYLINDRICAL, O-MBCY-W3	SMALL OUTLINE, R-XDSO-N4	SMALL OUTLINE, R-XDSO-N3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compli	compliant	compliant	compliant
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	30
JESD-30 code	R-CDSO-N3	O-MBCY-W3	R-XDSO-N4	R-XDSO-N3	O-MBCY-W3
Number of components	1	1	1	1	1
Number of terminals	3	3	4	3	3
Package body material	CERAMIC, METAL-SEALED COFIRED	METAL	UNSPECIFIED	UNSPECIFIED	METAL
Package shape	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Guideline	MIL-19500/255	MIL-19500/255	MIL-19500/255	MIL-19500/255	MIL-19500/255
surface mount	YES	NO	YES	YES	NO
Terminal form	NO LEAD	WIRE	NO LEAD	NO LEAD	WIRE
Terminal location	DUAL	BOTTOM	DUAL	DUAL	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	300 ns	300 ns	300 ns	300 ns	300 ns
Maximum opening time (tons)	35 ns	35 ns	35 ns	35 ns	35 ns
Maker	Microsemi	-	-	Microsemi	Microsemi
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible
ECCN code	-	EAR99	EAR99	EAR99	EAR99
JESD-609 code	-	e0	e0	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal surface	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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