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JANHC2N2222A

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size58KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANHC2N2222A Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN

JANHC2N2222A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/255
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
2N2221A, L; 2N2222A, L
(1)
2N2221AUA; 2N2222AUA
(2)
2N2221AUB; 2N2222AUB
(1)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
Symbol
R
θ
JA
All Types
50
75
6.0
800
0.5
0.65
0.50
-65 to +200
Max.
325
210
325
Unit
Vdc
Vdc
Vdc
mAdc
W
TO-18* (TO-206AA)
2N2221A, 2N2222A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/
0
C above T
A
> +37.5
0
C
2) Derate linearly 4.76 mW/
0
C above T
A
> +63.5
0
C
Unit
0
4 PIN*
2N2221AUA, 2N2222AUA
C/W
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
50
10
10
10
10
50
Max.
Unit
Vdc
µAdc
ηAdc
µAdc
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 75 Vdc
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
I
EBO
I
CES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

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Description Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N4 SMALL OUTLINE, R-XDSO-N3 SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code compliant compli compliant compliant compliant
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30 30
JESD-30 code O-MBCY-W3 O-MBCY-W3 R-XDSO-N4 R-XDSO-N3 R-CDSO-N3
Number of components 1 1 1 1 1
Number of terminals 3 3 4 3 3
Package body material METAL METAL UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN
Guideline MIL-19500/255 MIL-19500/255 MIL-19500/255 MIL-19500/255 MIL-19500/255
surface mount NO NO YES YES YES
Terminal form WIRE WIRE NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 300 ns 300 ns 300 ns 300 ns 300 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns 35 ns 35 ns
Is it lead-free? Contains lead Contains lead Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible incompatible incompatible -
Maker Microsemi - - Microsemi Microsemi
ECCN code EAR99 EAR99 EAR99 EAR99 -
JESD-609 code e0 e0 e0 e0 -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
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