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JANHC2N2222AL

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size58KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANHC2N2222AL Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN

JANHC2N2222AL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/255
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
Base Number Matches1
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
2N2221A, L; 2N2222A, L
(1)
2N2221AUA; 2N2222AUA
(2)
2N2221AUB; 2N2222AUB
(1)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
Symbol
R
θ
JA
All Types
50
75
6.0
800
0.5
0.65
0.50
-65 to +200
Max.
325
210
325
Unit
Vdc
Vdc
Vdc
mAdc
W
TO-18* (TO-206AA)
2N2221A, 2N2222A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/
0
C above T
A
> +37.5
0
C
2) Derate linearly 4.76 mW/
0
C above T
A
> +63.5
0
C
Unit
0
4 PIN*
2N2221AUA, 2N2222AUA
C/W
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
50
10
10
10
10
50
Max.
Unit
Vdc
µAdc
ηAdc
µAdc
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 75 Vdc
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
I
EBO
I
CES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANHC2N2222AL Related Products

JANHC2N2222AL JANHC2N2222AUA JANHC2N2222AUB JANTX2N2222AUBT/R JANHC2N2222A
Description Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
package instruction CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N4 SMALL OUTLINE, R-XDSO-N3 SMALL OUTLINE, R-CDSO-N3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compli compliant compliant compliant compliant
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30 30
JESD-30 code O-MBCY-W3 R-XDSO-N4 R-XDSO-N3 R-CDSO-N3 O-MBCY-W3
Number of components 1 1 1 1 1
Number of terminals 3 4 3 3 3
Package body material METAL UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED METAL
Package shape ROUND RECTANGULAR RECTANGULAR RECTANGULAR ROUND
Package form CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN
Guideline MIL-19500/255 MIL-19500/255 MIL-19500/255 MIL-19500/255 MIL-19500/255
surface mount NO YES YES YES NO
Terminal form WIRE NO LEAD NO LEAD NO LEAD WIRE
Terminal location BOTTOM DUAL DUAL DUAL BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 300 ns 300 ns 300 ns 300 ns 300 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns 35 ns 35 ns
Is it lead-free? Contains lead Contains lead Contains lead - Contains lead
Is it Rohs certified? incompatible incompatible incompatible - incompatible
ECCN code EAR99 EAR99 EAR99 - EAR99
JESD-609 code e0 e0 e0 - e0
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified
Terminal surface TIN LEAD TIN LEAD TIN LEAD - TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED
Maker - - Microsemi Microsemi Microsemi

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