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JAN2N6193

Description
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerCobham PLC
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JAN2N6193 Overview

Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3

JAN2N6193 Parametric

Parameter NameAttribute value
MakerCobham PLC
package instructionHERMETIC SEALED, METAL CAN-3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
GuidelineMIL-19500/561
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2020 ns
Maximum opening time (tons)200 ns
PNP Power Silicon Transistor
2N6193
Features
Available in commercial, JAN, JANTX, JANTXV, JANS
and JANSR 100K rads (Si) per MIL-PRF-19500/561
TO-39 (TO-205AD) Package
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = 25 °C
@ TC = 25 °C
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
Top, Tstg
Value
100
100
6.0
5.0
1.0
1.0
17.5
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Operating & Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Maximum
10
Units
°C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
OFF Characteristics
Collector - Emitter Breakdown Voltage
IC = 50 mAdc
Collector - Emitter Cutoff Current
VCE = 100 Vdc
Emitter - Base Cutoff Current
VEB = 6.0 Vdc
Collector - Emitter Cutoff Current
VCE = 90 Vdc, VBE = +1.5 Vdc
Collector - Base Cutoff Current
VCE = 100 Vdc
Symbol
V(BR)CEO
ICEO
IEBO
ICEX
ICBO
Mimimum
100
---
---
---
---
Maximum
---
100
100
10
10
Units
Vdc
μAdc
μAdc
μAdc
μAdc
Revision Date: 4/22/2014
1

JAN2N6193 Related Products

JAN2N6193 JANTX2N6193 JANTXV2N6193 JANS2N6193
Description Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-39, 3 PIN
Maker Cobham PLC Cobham PLC Cobham PLC Cobham PLC
package instruction HERMETIC SEALED, METAL CAN-3 HERMETIC SEALED, METAL CAN-3 HERMETIC SEALED, METAL CAN-3 TO-39, 3 PIN
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40
JEDEC-95 code TO-39 TO-39 TO-39 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/561 MIL-19500/561 MIL-19500/561 MILITARY STANDARD (USA)
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum off time (toff) 2020 ns 2020 ns 2020 ns 2200 ns
Maximum opening time (tons) 200 ns 200 ns 200 ns 200 ns
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