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ME8512SCM-15

Description
EEPROM Module, 512KX8, 150ns, Parallel, CMOS
Categorystorage    storage   
File Size389KB,10 Pages
ManufacturerMOSAIC
Websitehttp://www.mosaicsemi.com/
Download Datasheet Parametric Compare View All

ME8512SCM-15 Overview

EEPROM Module, 512KX8, 150ns, Parallel, CMOS

ME8512SCM-15 Parametric

Parameter NameAttribute value
MakerMOSAIC
package instruction,
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time150 ns
Other featuresPAGE WRITE; AUTOMATIC WRITE
JESD-30 codeR-XDMA-T32
memory density4194304 bit
Memory IC TypeEEPROM MODULE
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal locationDUAL

ME8512SCM-15 Related Products

ME8512SCM-15 ME8512SCMB-20 ME8512SCM-20 ME8512SCMB-15 ME8512SC-15 ME8512SCI-15
Description EEPROM Module, 512KX8, 150ns, Parallel, CMOS EEPROM Module, 512KX8, 200ns, Parallel, CMOS EEPROM Module, 512KX8, 200ns, Parallel, CMOS EEPROM Module, 512KX8, 150ns, Parallel, CMOS EEPROM Module, 512KX8, 150ns, Parallel, CMOS EEPROM Module, 512KX8, 150ns, Parallel, CMOS
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A991.B.1.B.1 3A991.B.1.B.1
Maximum access time 150 ns 200 ns 200 ns 150 ns 150 ns 150 ns
Other features PAGE WRITE; AUTOMATIC WRITE PAGE WRITE; AUTOMATIC WRITE PAGE WRITE; AUTOMATIC WRITE PAGE WRITE; AUTOMATIC WRITE PAGE WRITE; AUTOMATIC WRITE PAGE WRITE; AUTOMATIC WRITE
JESD-30 code R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type EEPROM MODULE EEPROM MODULE EEPROM MODULE EEPROM MODULE EEPROM MODULE EEPROM MODULE
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32
word count 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 70 °C 85 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C - -40 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY COMMERCIAL INDUSTRIAL
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches - 1 1 1 1 -
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