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TCBZT55C3V3

Description
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
CategoryDiscrete semiconductor    diode   
File Size166KB,5 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Environmental Compliance
Download Datasheet Parametric View All

TCBZT55C3V3 Overview

3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA

TCBZT55C3V3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTak Cheong
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.06%
Working test current5 mA
TAK CHEONG
®
SEM IC O N DU C TO R
500 mW QUADRO Mini-MELF
Hermetically Sealed Glass Zener
Voltage Regulators
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
Value
500
-65 to +175
+175
Units
mW
°C
°C
Cathode Band Color: Blue
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
Quadro mini-MELF Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Termianls are readily solderable
RoHS Compliant
Matte Tin (Sn) Terminal Finish
Color Band Indicates Negative Polarity
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Device Type
TCBZT55C 2V0
TCBZT55C 2V2
TCBZT55C 2V4
TCBZT55C 2V7
TCBZT55C 3V0
TCBZT55C 3V3
TCBZT55C 3V6
TCBZT55C 3V9
TCBZT55C 4V3
TCBZT55C 4V7
TCBZT55C 5V1
TCBZT55C 5V6
TCBZT55C 6V2
TCBZT55C 6V8
TCBZT55C 7V5
TCBZT55C 8V2
TCBZT55C 9V1
TCBZT55C 10
TCBZT55C 11
TCBZT55C 12
TCBZT55C 13
Number: DB-066
June 2008 / D
T
A
= 25°C unless otherwise noted
V
Z
@ I
ZT
Z
ZT
@ I
ZT
I
ZT
(Volts)
(Ω)
(mA)
Max
Min
Max
2.11
2.33
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
I
R
@ V
R
(μA)
Max
100
100
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
1.88
2.08
2.28
2.51
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
Page 1
TCBZT55C2V0 through TCBZT55C75
TCBZT55B2V0 through TCBZT55B75
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