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M2V64S30DTP-5

Description
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54
Categorystorage    storage   
File Size512KB,51 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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M2V64S30DTP-5 Overview

Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54

M2V64S30DTP-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals54
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
-5,-5L:Preliminary
MITSUBISHI LSIs
M2V64S20DTP-5,-5L,-6,-6L,-7,-7L
M2V64S30DTP-5,-5L,-6,-6L,-7,-7L
SDRAM (Rev.4.2)
M2V64S40DTP-5,-5L,-6,-6L,-7,-7L
Jun.'01
(4-BANK x 4,194,304-WORD x
(4-BANK x 2,097,152-WORD x
4-BIT)
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Some of contents are described for general products and are subject to change w ithout notice.
DESCRIPTION
M 2V64S20DTP is a 4-bank x 4,194,304-word x 4-bit,
M 2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit,
M 2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit,
synchronous DRAM , with LVTTL interface. All inputs and outputs are referenced to the rising edge
of CLK. M 2V64S20DTP, M2V64S30DTP and M 2V64S40DTP achieve very high speed data rate up
to 166MHz for -5, 133MHz for -6, 100MHz for -7, and are suitable for main memory or graphic
memory in computer systems.
FEATURES
M2V64S20/30/40DTP
ITEM
tCLK
tRAS
tRCD
tAC
tRC
Icc1
Clock Cycle Time
Active to Precharge Command Period
Row to Column Delay
Access Time from CLK
Active Command Period
Operation Current
(Max.)
(Single Bank)
(Max.)
(Min.)
(Min.)
(Min.)
(Max.) (CL=3)
(Min.)
V64S20D
V64S30D
V64S40D
Icc6
Self Refresh Current
-5
6ns
42ns
15ns
5.4ns
60ns
90mA
90mA
100mA
1mA
-6
7.5ns
45ns
20ns
5.4ns
67.5ns
75mA
75mA
85mA
1mA
-7
10ns
50ns
20ns
6ns
70ns
70mA
70mA
80mA
1mA
- Single 3.3v±0.3V power supply
- Max. Clock frequency -5:166MHz<3-3-3>, -6:133MHz<3-3-3>, -7:100MHz<2-2-2>
- Fully Synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0 & BA1 (Bank Address)
- /CAS latency- 2 and 3 (programmable)
- Burst length- 1, 2, 4, 8 and full page (programmable)
- Burst type- sequential and interleave (programmable)
- Byte Control- DQM L and DQMU for M2V64S40DTP
- Random column access
- Auto precharge and All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles every 64ms
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
MITSUBISHI ELECTRIC
1

M2V64S30DTP-5 Related Products

M2V64S30DTP-5 1N4748A M2V64S20DTP-5L M2V64S30DTP-5L M2V64S40DTP-5 M2V64S40DTP-5L
Description Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Custom bar coding for shipments Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
Maker Mitsubishi - Mitsubishi Mitsubishi Mitsubishi Mitsubishi
Parts packaging code TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts 54 - 54 54 54 54
Reach Compliance Code unknown - unknown unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns - 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 166 MHz - 166 MHz 166 MHz 166 MHz 166 MHz
I/O type COMMON - COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609 code e0 - e0 e0 e0 e0
length 22.22 mm - 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bit - 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 8 - 4 8 16 16
Number of functions 1 - 1 1 1 1
Number of ports 1 - 1 1 1 1
Number of terminals 54 - 54 54 54 54
word count 8388608 words - 16777216 words 8388608 words 4194304 words 4194304 words
character code 8000000 - 16000000 8000000 4000000 4000000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C 70 °C 70 °C 70 °C
organize 8MX8 - 16MX4 8MX8 4MX16 4MX16
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSOP54,.46,32 - TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 - 4096 4096 4096 4096
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES - YES YES YES YES
Continuous burst length 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.001 A - 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.17 mA - 0.17 mA 0.17 mA 0.17 mA 0.17 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES YES
technology CMOS - CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm - 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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