ZLLS400
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
R
= 40V; I
F
= 0.52A; I
R
= 10mA
DESCRIPTION
This compact SOD323 packaged Schottky diode offers users an excellent
performance combination comprising high current operation, extremely low
leakage and low forward voltage ensuring suitability for applications requiring
efficient operation at higher temperatures ( above 85 C) see Operational Efficiency
chart on page 4.
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
·
Low Equivalent On Resistance
·
Extremely Low Leakage (10 A @30V)
·
High current capability (I
F
= 0.52A)
·
Low VF, Fast switching Schottky
·
SOD323 Package
·
ZLLS400 complements low temperature equivalent ZHCS400
·
Package thermally rated to 150 C
APPLICATIONS
·
DC - DC Converters
·
Mobile Phones
·
Charging Circuits
·
Motor control
ORDERING INFORMATION
DEVICE
ZLLS400TA
ZLLS400TC
REEL
TAPE WIDTH
(inches) (mm)
7
13
QUANTITY
PER REEL
8mm embossed 3000 units
8mm embossed 10000 units
DEVICE MARKING
40
ISSUE 1 - JANUARY 2002
1
Top view
ZLLS400
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Schottky Diode
Continuous Reverse Voltage
Forward Current
Peak Repetitive Forward Current
Rectangular Pulse Duty Cycle
Non Repetitive Forward Current
Package
Power Dissipation at T
amb
=25 C
single die continuous
single die measured at t<5 secs
Storage Temperature Range
Junction Temperature
T
stg
Tj
SYMBOL
VALUE
UNIT
V
R
I
F
I
FPK
t= 100 s
t= 10ms
I
FSM
40
0.52
0.85
12
2.5
V
A
A
A
A
P
D
330
390
-55 to +150
150
mW
mW
C
C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
R
JA
JA
VALUE
379
317
UNIT
°C/W
°C/W
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
ISSUE 1 - JANUARY 2002
2
ZLLS400
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2002
3
ZLLS400
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
SCHOTTKY DIODE CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V
(BR)R
V
F
40
310
350
425
520
610
690
860
494
Reverse Current
Diode Capacitance
Reverse Recovery Time
Reverse Recovery Charge
I
R
C
D
t
rr
Q
rr
5.5
370
15.5
2.46
1.38
10
350
400
520
610
850
1000
1300
V
mV
mV
mV
mV
mV
mV
mV
mV
A
mA
pF
ns
nC
I
R
=500µA
I
F
=50 mA*
I
F
=100 mA*
I
F
=250mA*
I
F
=400mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=500mA*,Ta = 100 C
V
R
=30V
V
R
=30V,Ta = 85 C
f=1MHz,VR=30V
Switched from I
F
= 500mA
to V
R
= 5V. Measured @ I
R
50mA.
di / d t > 1A / ns.
Rsource = 6 ohm.
*Measured under pulsed conditions.
Operational Efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will
benefit from using Zetex low V
F
ZHCS Series diodes.
ISSUE 1 - JANUARY 2002
4
ZLLS400
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2002
5
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