Power Field-Effect Transistor, 22A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
| Parameter Name | Attribute value |
| Maker | Omnirel Corp. |
| Reach Compliance Code | unknown |
| Other features | HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 1200 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (ID) | 22 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | S-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 85 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| OM6026SAV | OM6025SAV | OM6026SAT | OM6025SAT | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 22A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 24A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 22A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Power Field-Effect Transistor, 24A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 1200 mJ | 1000 mJ | 1200 mJ | 1000 mJ |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V | 400 V | 500 V | 400 V |
| Maximum drain current (ID) | 22 A | 24 A | 22 A | 24 A |
| Maximum drain-source on-resistance | 0.3 Ω | 0.23 Ω | 0.3 Ω | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA | TO-254AA | TO-254AA | TO-254AA |
| JESD-30 code | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | SQUARE | SQUARE | SQUARE | SQUARE |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 85 A | 92 A | 85 A | 92 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
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