PD-9.1431
TARGET
IRGCC20UE
IRGCC20UE IGBT Die in Wafer Form
C
G
E
600 V
Size 2
Ultra-Fast Speed
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
3.1V Max.
I
C
= 6.5A, T
J
= 25°C, V
GE
= 15V
600V Min.
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
3.0V Min., 5.5V Max.
V
GE
= V
CE
, T
J
=25°C, I
C
=250µA
250 µA Max.
T
J
= 25°C, V
CE
= 600V
±
500 nA Max.
T
J
= 25°C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGBC20U
Cr-Ni-Ag (1 kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.107" x 0.134"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5198
100 Microns
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
INK DOT
LOCATION
1.66
(.066 )
NOTES :
1. ALL D IM ENSIONS ARE SH OW N IN MILLIM ETERS ( INCH ES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SOURC E
G = GATE
4. DIMENSION AL TOLERANCES
BONDING PADS : < 0.635 TOLER AN CE = +/- 0.013
W IDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LEN GTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVER ALL D IE
< 1.270 TOLER AN CE = +/- 0.102
W IDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LEN GTH
> (.050 ) TOLERANCE = + /- (.008 )
5. UNLESS OTHERW ISE NOTED ALL DIE ARE GEN III
0.94
(.037)
EM ITT ER
3.40
(.134 )
0.75
(.029 )
GATE
0.76
2.72 (.030 )
(.107 )
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