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OM5233DT

Description
Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

OM5233DT Overview

Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

OM5233DT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionHERMETIC SEALED, METAL, TO-257AA, 3 PIN
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Maximum non-repetitive peak forward current60 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT
OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY,
CENTER-TAP RECTIFIER
16 Amp, 50 To 600 Volts, 35 To 50 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Recovery Time
Hermetic Metal Package, JEDEC TO-257AA Outline
Low Thermal Resistance
Isolated Package
High Surge
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines two high
efficiency devices into one package, simplifying installation, reducing heat sink
hardware, and the need to obtain matched components. These devices are ideally
suited for Hi-Rel applications where small size and a hermetically sealed package
is required. Common anode configurations are also available. Common cathode
is standard.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 600 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . . 8A
Surge Current (Non-Repetitive 8.3 msec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . - 55° C to + 150° C
X.
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
1
2
COMMON
CATHODE
OMXXXXST
3
DOUBLER
2
OMXXXXDT
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
1
2
3
3
OMXXXXRT
3
.150
.140
.430
.410
.038 MAX.
.750
.500
.005
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
Z-Tab package also available.
.035
.025
.100 TYP.
.120 TYP.
4 11 R5
Supersedes 1 07 R4
3.2 - 43
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