AM28F010A-95FC datasheet, PDF - EEWORLD Datasheet

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AM28F010A-95FC: DescriptionFlash, 128KX8, 90ns, PDSO32, REVERSE, TSOP-32; Categorystorage storage; File Size185KB，34 Pages; ManufacturerAMD; Websitehttp://www.amd.com

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AM28F010A-95FC Overview

Flash, 128KX8, 90ns, PDSO32, REVERSE, TSOP-32

AM28F010A-95FC Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	AMD
Parts packaging code	TSOP
package instruction	TSOP1-R, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	90 ns
Other features	100K WRITE/ERASE CYCLES MIN
command user interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	1048576 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	8 mm

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FINAL

Am28F010A

1 Megabit (131,072 x 8-Bit) CMOS 12.0 Volt, Bulk Erase

Flash Memory with Embedded Algorithms

DISTINCTIVE CHARACTERISTICS

High performance

— 90 ns maximum access time

CMOS low power consumption

— 30 mA maximum active current

— 100

µA

maximum standby current

— No data retention power consumption

Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

100,000 write/erase cycles minimum

Write and erase voltage 12.0 V

±5%

Latch-up protected to 100 mA from –1 V to

+1 V

Advanced

Micro

Devices

Embedded Erase Electrical Bulk Chip-Erase

— Three seconds typical chip-erase including

pre-programming

Embedded Program

— 14

µs

typical byte-program including time-out

— Two seconds typical chip program

Command register architecture for

microprocessor/microcontroller compatible

write interface

On-chip address and data latches

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

Embedded algorithms for completely

self-timed write/erase operations

GENERAL DESCRIPTION

The Am28F010A is a 1 Megabit Flash memory organ-

ized as 128K bytes of 8 bits each. AMD’s Flash

memories offer the most cost-effective and reliable

read/write non- volatile random access memory. The

Am28F010A is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM program-

mers. The Am28F010A is erased when shipped from

the factory.

The standard Am28F010A offers access times as fast

as 90 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F010A has separate chip enable (CE) and out-

put enable (OE) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010A uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash standard 32-pin pinout. The command register al-

lows for 100% TTL level control inputs and fixed power

supply levels during erase and programming, while

maintaining maximum EPROM compatibility.

AMD’s Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

2-164

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F010A uses a

12.0 V

5% V

high voltage input to perform the erase

and programming functions.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to V

+1 V.

Embedded Program

The Am28F010A is byte programmable using the Em-

bedded Programming algorithm. The Embedded Pro-

gramming algorithm does not require the system to

time-out or verify the data programmed. The typical

room temperature programming time of the

Am28F010A is two seconds.

Embedded Erase

The entire chip is bulk erased using the Embedded

Erase algorithm. The Embedded Erase algorithm auto-

matically programs the entire array prior to electrical

erase. The timing and verification of electrical erase are

controlled internal to the device. Typical erasure at room

Publication#

16778

Rev.

Amendment

Issue Date:

November 1995

AM28F010A-95FC Related Products

	AM28F010A-95FC	AM28F010A-95JC	AM28F010A-95PC	AM28F010A-95EC
Description	Flash, 128KX8, 90ns, PDSO32, REVERSE, TSOP-32	Flash, 128KX8, 90ns, PQCC32, PLASTIC, LCC-32	Flash, 128KX8, 90ns, PDIP32, PLASTIC, DIP-32	Flash, 128KX8, 90ns, PDSO32, TSOP-32
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TSOP	QFJ	DIP	TSOP
package instruction	TSOP1-R, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	PLASTIC, DIP-32	TSOP1, TSSOP32,.8,20
Contacts	32	32	32	32
Reach Compliance Code	unknown	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	90 ns	90 ns	90 ns	90 ns
Other features	100K WRITE/ERASE CYCLES MIN	100K WRITE/ERASE CYCLES MIN	100K WRITE/ERASE CYCLES MIN	100K WRITE/ERASE CYCLES MIN
command user interface	YES	YES	YES	YES
Data polling	YES	YES	YES	YES
JESD-30 code	R-PDSO-G32	R-PQCC-J32	R-PDIP-T32	R-PDSO-G32
JESD-609 code	e0	e0	e0	e0
length	18.4 mm	13.97 mm	42.164 mm	18.4 mm
memory density	1048576 bit	1048576 bi	1048576 bit	1048576 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1-R	QCCJ	DIP	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20	LDCC32,.5X.6	DIP32,.6	TSSOP32,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	IN-LINE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V
Programming voltage	12 V	12 V	12 V	12 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	3.556 mm	5.715 mm	1.2 mm
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	J BEND	THROUGH-HOLE	GULL WING
Terminal pitch	0.5 mm	1.27 mm	2.54 mm	0.5 mm
Terminal location	DUAL	QUAD	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	8 mm	11.43 mm	15.24 mm	8 mm
Maker	AMD	-	AMD	AMD

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