DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PNP complement is BFT92.
PINNING
PIN
1
2
3
DESCRIPTION
Code: P1p
base
emitter
collector
1
Top view
fpage
BFR92
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
G
UM
F
V
o
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
output voltage
up to T
s
= 95
°C;
note 1
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
°C
I
C
= 2 mA; V
CE
= 10 V; f = 1 MHz
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
°C;
Z
s
= opt.
d
im
=
−60
dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
Ω;
T
amb
= 25
°C;
f
(p+q−r)
= 493.25 MHz
open base
CONDITIONS
open emitter
TYP.
−
−
−
−
5
0.4
18
2.4
150
MAX.
20
15
25
300
−
−
−
−
−
UNIT
V
V
mA
mW
GHz
pF
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 95
°C;
note 1
open base
open collector
CONDITIONS
open emitter
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2
25
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. Crystal mounted in a SOT37 envelope (BFR90).
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 14 mA; V
CE
= 10 V
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 14 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°C
MIN.
−
40
−
−
−
−
−
−
−
TYP.
−
90
5
0.75
0.8
0.4
18
2.4
150
2
BFR92
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 95
°C;
note 1
THERMAL RESISTANCE
260 K/W
MAX.
50
−
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
noise figure (see Fig.2 and note 2) I
C
= 2 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
°C;
Z
s
= opt.
output voltage
note 3
S
21
- ˙
=
10 log
-------------------------------------------------------------
dB
2
2
1
–
S
11
1
–
S
22
3. d
im
=
−60
dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 495.25 MHz;
V
q
= V
o
−6
dB; f
q
= 503.25 MHz;
V
r
= V
o
−6
dB; f
r
= 505.25 MHz;
measured at f
(p+q−r
) = 493.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA425 - 1
400
handbook, halfpage
Ptot
handbook, halfpage
24 V
390
Ω
L3
820
Ω
3.9 k
Ω
300
Ω
L2
L1
680 pF
650 pF
(mW)
300
200
75
Ω
output
100
75
Ω
input
680 pF
DUT
16
Ω
MEA446
0
0
50
100
150
Ts (
o
C)
200
L2 = L3 = 5
µH
Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
120
handbook, halfpage
h FE
80
MCD074
MEA428
handbook, halfpage
1
Cc
(pF)
0.8
0.6
0.4
40
0.2
0
0
10
20
I C (mA)
30
0
0
10
V CB (V)
20
V
CE
= 10 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.4
DC current gain as a function of collector
current.
Fig.5
Collector capacitance as a function of
collector-base voltage.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA444
MEA427
handbook, halfpage
6
handbook, halfpage
30
fT
(GHz)
4
gain
(dB)
20
G UM
2
10
I S12 I
2
0
0
10
20
I C (mA)
30
0
2
10
10
3
f (MHz)
10
4
V
CE
= 10 V; f = 500 MHz; T
j
= 25
°C.
I
C
= 14 mA; V
CE
= 10 V; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current.
Fig.7 Gain as a function of frequency.
handbook, halfpage
6
MEA465
MEA424
F
(dB)
handbook, halfpage
5
5
F
(dB)
4
4
3
3
2
2
1
1
0
10
–1
1
f (GHz)
0
10
0
5
10
15
I C (mA)
20
I
C
= 2 mA; V
CE
= 10 V; T
amb
= 25
°C;
Z
s
= opt.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
°C;
Z
s
= opt.
Fig.8
Minimum noise figure as a function of
frequency.
Fig.9
Minimum noise figure as a function of
collector current.
September 1995
5
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