BC108LEADFREE datasheet, PDF - EEWORLD Datasheet

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BC108LEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size120KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BC108LEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

BC108LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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145 Adams Avenue, Hauppauge, NY 11788 USA

Tel: (631) 435-1110 • Fax: (631) 435-1824

BC108LEADFREE Related Products

	BC108LEADFREE	BC108ALEADFREE	BC109LEADFREE	BC107LEADFREE
Description	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	20 V	20 V	20 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	110	200	110
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz

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