TSM7N65
650V N-Channel Power MOSFET
ITO-220
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
650
R
DS(on)
(Ω)
1.2 @ V
GS
=10V
I
D
(A)
3
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
●
●
●
●
Low R
DS(ON)
1.2Ω (Max.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
Block Diagram
Ordering Information
Part No.
TSM7N65CZ C0
TSM7N65CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Maximum Power Dissipation @ Tc = 25
o
C
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TO-220
ITO-220
Ta = 25ºC
Ta = 100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
P
D
T
J
T
STG
Limit
650
±30
6.4
3.8
22
216
6
125
30
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
ºC
o
C
1/9
Version: A09
TSM7N65
650V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
TO-220
ITO-220
Symbol
RӨ
JC
RӨ
JA
Limit
1.0
4.2
62.5
Unit
o
C/W
C/W
o
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 3A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 650V, V
GS
= 0V
V
DS
= 650V, V
GS
= 0V,
T
C
=125ºC
V
GS
= ±20V, V
DS
= 0V
V
DS
= 8V, I
D
= 1A
I
S
= 6A, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
650
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.0
--
--
--
--
3.7
--
32
6
11
905
115
25
14
14
47
19
638
4.8
Max
--
1.2
4.0
1
50
±10
--
1.6
46
--
--
--
--
--
--
--
--
--
--
--
Unit
V
Ω
V
uA
uA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 300V, I
D
= 6A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
V
GS
= 0V, I
S
= 6A,
dI
F
/dt = 100A/us
V
GS
= 10V, I
D
= 6A,
V
DD
= 300V, R
G
= 25Ω
t
r
t
d(off)
t
f
t
fr
nS
nS
uC
Reverse Recovery Charge
Q
fr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. V
DD
= 50V, I
AS
=3.6A, L=30mH, V
DS
=500V
3. Pulse test: pulse width
≤300uS,
duty cycle
≤2%
4. Essentially Independent of Operating Temperature
2/9
Version: A09
TSM7N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/9
Version: A09
TSM7N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area - TO-220
Maximum Safe Operating Area - ITO-220
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: A09
TSM7N65
650V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
5/9
Version: A09
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