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TSM7N65CIC0

Description
650V N-Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size396KB,9 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

TSM7N65CIC0 Overview

650V N-Channel Power MOSFET

TSM7N65CIC0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)216 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage650 V
Maximum drain current (ID)7 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
TSM7N65
650V N-Channel Power MOSFET
ITO-220
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
650
R
DS(on)
(Ω)
1.2 @ V
GS
=10V
I
D
(A)
3
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Low R
DS(ON)
1.2Ω (Max.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
Block Diagram
Ordering Information
Part No.
TSM7N65CZ C0
TSM7N65CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Maximum Power Dissipation @ Tc = 25
o
C
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TO-220
ITO-220
Ta = 25ºC
Ta = 100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
P
D
T
J
T
STG
Limit
650
±30
6.4
3.8
22
216
6
125
30
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
ºC
o
C
1/9
Version: A09

TSM7N65CIC0 Related Products

TSM7N65CIC0 TSM7N65CZC0 TSM7N65
Description 650V N-Channel Power MOSFET 650V N-Channel Power MOSFET 650V N-Channel Power MOSFET
Maker Taiwan Semiconductor Taiwan Semiconductor -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code compli compliant -
Avalanche Energy Efficiency Rating (Eas) 216 mJ 216 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 650 V 650 V -
Maximum drain current (ID) 7 A 7 A -
Maximum drain-source on-resistance 1.2 Ω 1.2 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 22 A 22 A -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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