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TSM7N65

Description
650V N-Channel Power MOSFET
File Size396KB,9 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM7N65 Overview

650V N-Channel Power MOSFET

TSM7N65
650V N-Channel Power MOSFET
ITO-220
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
650
R
DS(on)
(Ω)
1.2 @ V
GS
=10V
I
D
(A)
3
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Low R
DS(ON)
1.2Ω (Max.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
Block Diagram
Ordering Information
Part No.
TSM7N65CZ C0
TSM7N65CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Maximum Power Dissipation @ Tc = 25
o
C
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TO-220
ITO-220
Ta = 25ºC
Ta = 100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
P
D
T
J
T
STG
Limit
650
±30
6.4
3.8
22
216
6
125
30
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
ºC
o
C
1/9
Version: A09

TSM7N65 Related Products

TSM7N65 TSM7N65CZC0 TSM7N65CIC0
Description 650V N-Channel Power MOSFET 650V N-Channel Power MOSFET 650V N-Channel Power MOSFET
Maker - Taiwan Semiconductor Taiwan Semiconductor
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code - compliant compli
Avalanche Energy Efficiency Rating (Eas) - 216 mJ 216 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 650 V 650 V
Maximum drain current (ID) - 7 A 7 A
Maximum drain-source on-resistance - 1.2 Ω 1.2 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 22 A 22 A
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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