13.5-16.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 04-Jan-10
P1057-BD
Chip Device Layout
Features
10W Power Amplifier
Dual Sided Bias Architecture
17 dB Small Signal Gain
+39.0 dBm P1dB Compression Point
+41.0 dBm Pulsed Saturated Output Power
+48.0 dBm Output Third Order Intercept
100% On-Wafer DC, RF and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1057-BD
General Description
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs
MMIC power amplifier has a small signal gain of 17.0
dB with +48.0 dBm output third order intercept. This
MMIC uses Mimix Broadband’s GaAs PHEMT device
model technology, and is based upon optical
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Military, Space, Microwave Point-to-Point
Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
1
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
1
+8.0 VDC
600,1400,3000 mA
+0.3 VDC
+33.0 dBm
-65 to +165 ºC
-55 to +85 ºC
175 ºC
(1) Channel temperature affects a device’s MTTF. It is
recommended to keep channel temperature as low as possible
for maximum life
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
2
Gain Flatness (delta S21)
Reverse Isolation (S12)
Output Power for 1dB Compression Point (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=7.5V, Vg=-0.8 V Typical)
Supply Current (Id2) (Vd=7.5V, Vg=-0.8 V Typical)
Supply Current (Id3) (Vd=7.5V, Vg=-0.8 V Typical)
(2) Measured on wafer pulsed.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
mA
mA
Min
13.5
-
-
-
-
-
-
-
-
-
-1.5
-
-
-
Typ
-
10.0
10.0
17.0
+/-1.0
60.0
+39.0
+48.0
+40.0
+7.5
-0.8
500
1000
2200
Max
16.0
-
-
-
-
-
-
-
-
+7.8
0.0
550
1200
2600
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 12
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-16.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 04-Jan-10
P1057-BD
Power Amplifier Measurements (On-Wafer
1
)
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
20
19
18
17
30
20
10
0
-10
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
Gain (dB)
Gain (dB)
16
15
14
13
12
11
10
12.0
-20
-30
-40
-50
-60
-70
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
-80
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
0
0
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
-5
-5
Input Return Loss (dB)
-10
Input Return Loss (dB)
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
-10
-15
-15
-20
-20
-25
-25
-30
12.0
-30
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
0
0
XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA
Id2=499 mA, Id3=996 mA
-5
-5
Output Return Loss (dB)
-10
Output Return Loss (dB)
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
-10
-15
-15
-20
-20
-25
-25
-30
12.0
-30
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements
– On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um
in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 12
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-16.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 04-Jan-10
P1057-BD
Power Amplifier Measurements (On-Wafer
1
) (cont.)
XP1057-BD, Vd=8.0 V, Vg=Varied
Pulsed into 50 + j0, Pin = +20 dBm
42
41
40
Output Power Psat (dBm)
39
38
37
36
35
34
33
32
13.0
Vg = -1.3 V
Vg = -1.2 V
Vg = -1.1 V
Vg = -1.0 V
Vg = -0.9 V
Vg = -0.8 V
Vg = -0.7 V
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Note [1] Measurements
– On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 12
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-16.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 04-Jan-10
P1057-BD
Power Amplifier Measurements (Test Fixture
1
)
XP1057-BD, Vd=8.0 V, Vg=-0.8 V
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
14.00
41.0
40.5
40.0
39.5
XP1057-BD, Vd=8.0 V, Vg=-0.8 V
P1dB (dBm)
+85C
-40C
+25C
Gain (dB)
39.0
38.5
38.0
37.5
37.0
36.5
+85C
-40C
+25C
14.25
14.50
14.75
15.00
15.25
15.50
15.75
16.00
Frequency (GHz)
36.0
14.00
14.25
14.50
14.75
15.00
15.25
15.50
15.75
16.00
Frequency (GHz)
XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Pscl = +22 dBm
52
51
XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=14.5 GHz
52
51
Output Third Order Intercept (dBm)
50
49
48
47
46
45
44
43
42
14.00
+85C
14.25
-40C
14.50
+25C
14.75
15.00
15.25
15.50
15.75
16.00
Output Third Order Intercept (dBm)
50
49
48
47
46
45
44
43
42
18
19
20
21
22
23
24
25
26
+85C
-40C
+25C
Frequency (GHz)
Output Power per Tone (dBm)
XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=15.0 GHz
52
51
XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=15.5 GHz
52
51
Output Third Order Intercept (dBm)
Output Third Order Intercept (dBm)
50
49
48
47
46
45
44
43
42
18
19
20
21
22
23
24
25
26
+85C
-40C
+25C
50
49
48
47
46
45
44
43
42
18
19
20
21
22
23
24
25
26
+85C
-40C
+25C
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Note [1] Measurements
– Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 12
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-16.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 04-Jan-10
P1057-BD
Power Amplifier Measurements (Test Fixture
1
) (cont.)
30
25
20
XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA
Id2=1016 mA, Id3=2077 mA
0
-10
XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA
Id2=1016 mA, Id3=2077 mA
Reverse Isolation (dB)
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-20
-30
-40
-50
-60
-70
-80
10.0
Gain (d
B)
15
10
5
0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
+85 Deg C
-40 Deg C
+25 Deg C
Frequency (GHz)
+85 Deg C
-40 Dec C
+25 Deg C
0
XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA
Id2=1016 mA, Id3=2077 mA
0
XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA
Id2=1016 mA, Id3=2077 mA
-5
-5
Output Return Loss (dB)
Input Return Loss (dB)
-10
-10
-15
-15
-20
-20
-25
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-25
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
+85 Deg C
-40 Deg C
+25 Deg C
+85 Deg C
Frequency (GHz)
-40 Deg C
+25 Deg C
10
XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=506 mA
Id2=972 mA, Id3=1962 mA
25
24
XP1057-BD, Vd=Varied, Vg=-0.9 V, Id1=525 mA
Id2=1016 mA, Id3=2077 mA
9
23
22
Noise Figure (dB)
Gain (dB)
14.0
14.5
15.0
15.5
16.0
8
21
20
19
18
7
6
17
16
15
13.5
14.0
14.5
Vd=6.5
Vd=6 5 V
15.0
Vd=7.0
Vd=7 0 V
15.5
Vd=7.5
Vd=7 5 V
16.0
5
13.5
Frequency (GHz)
+85 Deg C
85
-40 Deg C
40
+25 Deg C
25
Frequency (GHz)
Note [1] Measurements
– Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 12
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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