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1N5822

Description
3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
Categorysemiconductor    Discrete semiconductor   
File Size45KB,2 Pages
ManufacturerCTC [Compact Technology Corp.]
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1N5822 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201

1N5822 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current150 A
Compact Technology
1N5820 thru 1N5822
REVERSE VOLTAGE -
20
to
40
Volts
FORWARD CURRENT -
3.0
Ampere
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
A
DO-201AD
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight :
1.071.
grams
Mounting position : Any
DO-41
Dim.
A
B
C
Min.
25.4
8.50
1.20
Max.
-
9.50
1.30
5.00
5.60
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
1 of 2
1N5820 Thru 1N5822

1N5822 Related Products

1N5822 1N5820 1N5821
Description 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201 RECTIFIER DIODE RECTIFIER DIODE, DO-201AD
state ACTIVE ACTIVE -
Diode type rectifier diode RECTIFIER DIODE -
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