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RJS6004TDPN-EJ#T2

Description
RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size55KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJS6004TDPN-EJ#T2 Overview

RECTIFIER DIODE

RJS6004TDPN-EJ#T2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionR-PSFM-T2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.015 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Preliminary Datasheet
RJS6004TDPN-EJ
600V - 10A - Diode
SiC Schottky Barrier Diode
Features
New semiconductor material: Silicon Carbide Diode
No reverse recovery / No forward recovery
R07DS0895EJ0101
Rev.1.01
Nov 21, 2012
Outline
RENESAS Package code: PRSS0003AN-A
(Package name: TO-220AB-2L)
1
1. Cathode
2. Anode
2
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction to case thermal impedance
Junction temperature
Storage temperature
Symbol
V
RM
I
F
I
FSM
j-c
Tj
Tstg
Ratings
600
10
60
1.7
150
–55 to +150
Unit
V
A
A
C/W
C
C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
t
rr
Min
Typ
1.5
15
Max
1.8
10
Unit
V
A
ns
Test conditions
I
F
= 10 A
V
R
= 600 V
I
F
= 10 A, di/dt = 300A/s
R07DS0895EJ0101 Rev.1.01
Nov 21, 2012
Page 1 of 3
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