HY5PS2G831AMP-E3 datasheet, PDF

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HY5PS2G831AMP-E3: Description2Gb DDR2 SDRAM(DDP); Categorystorage storage; File Size590KB，35 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5PS2G831AMP-E3 Overview

2Gb DDR2 SDRAM(DDP)

HY5PS2G831AMP-E3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	LFBGA, BGA71,9X19,32
Contacts	71
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B71
JESD-609 code	e1
length	17.5 mm
memory density	2147483648 bi
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	71
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	256MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA71,9X19,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.35 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.016 A
Maximum slew rate	0.268 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	11 mm

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HY5PS2G431AMP

HY5PS2G831AMP

2Gb DDR2 SDRAM(DDP)

HY5PS2G431AMP

HY5PS2G831AMP

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.6 / Oct. 2007

HY5PS2G831AMP-E3 Related Products

	HY5PS2G831AMP-E3	HY5PS2G431AMP-E3	HY5PS2G431AMP-C4	HY5PS2G431AMP-Y5	HY5PS2G831AMP	HY5PS2G431AMP	HY5PS2G831AMP-C4	HY5PS2G831AMP-Y5
Description	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)	2Gb DDR2 SDRAM(DDP)
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	-	conform to	conform to
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	-	-	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA	-	-	BGA	BGA
package instruction	LFBGA, BGA71,9X19,32	LFBGA, BGA71,9X19,32	LFBGA, BGA71,9X19,32	LFBGA, BGA71,9X19,32	-	-	LFBGA, BGA71,9X19,32	LFBGA, BGA71,9X19,32
Contacts	71	71	71	71	-	-	71	71
Reach Compliance Code	unknow	unknow	unknow	unknow	-	-	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	-	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.6 ns	0.6 ns	0.5 ns	0.45 ns	-	-	0.5 ns	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz	200 MHz	267 MHz	333 MHz	-	-	267 MHz	333 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	-	-	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	-	-	4,8	4,8
JESD-30 code	R-PBGA-B71	R-PBGA-B71	R-PBGA-B71	R-PBGA-B71	-	-	R-PBGA-B71	R-PBGA-B71
JESD-609 code	e1	e1	e1	e1	-	-	e1	e1
length	17.5 mm	17.5 mm	17.5 mm	17.5 mm	-	-	17.5 mm	17.5 mm
memory density	2147483648 bi	2147483648 bi	2147483648 bi	2147483648 bi	-	-	2147483648 bi	2147483648 bi
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-	-	DDR DRAM	DDR DRAM
memory width	8	4	4	4	-	-	8	8
Number of functions	1	1	1	1	-	-	1	1
Number of ports	1	1	1	1	-	-	1	1
Number of terminals	71	71	71	71	-	-	71	71
word count	268435456 words	536870912 words	536870912 words	536870912 words	-	-	268435456 words	268435456 words
character code	256000000	512000000	512000000	512000000	-	-	256000000	256000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	95 °C	95 °C	-	-	95 °C	95 °C
organize	256MX8	512MX4	512MX4	512MX4	-	-	256MX8	256MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	-	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	-	-	LFBGA	LFBGA
Encapsulate equivalent code	BGA71,9X19,32	BGA71,9X19,32	BGA71,9X19,32	BGA71,9X19,32	-	-	BGA71,9X19,32	BGA71,9X19,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	-	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260	-	-	260	260
power supply	1.8 V	1.8 V	1.8 V	1.8 V	-	-	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	-	-	8192	8192
Maximum seat height	1.35 mm	1.35 mm	1.35 mm	1.35 mm	-	-	1.35 mm	1.35 mm
self refresh	YES	YES	YES	YES	-	-	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8	-	-	4,8	4,8
Maximum standby current	0.016 A	0.016 A	0.016 A	0.02 A	-	-	0.016 A	0.02 A
Maximum slew rate	0.268 mA	0.268 mA	0.303 mA	0.32 mA	-	-	0.303 mA	0.32 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	-	-	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	-	-	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	-	-	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	-	-	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	-	-	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	-	-	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL	-	-	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	-	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20	-	-	20	20
width	11 mm	11 mm	11 mm	11 mm	-	-	11 mm	11 mm

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