Three Phase
Rectifier Bridges
Preliminary Data Sheet
V
RSM
V
800
1200
1400
1600
1800
V
RRM
V
800
1200
1400
1600
1800
Type
PSD 55/08
PSD 55/12
PSD 55/14
PSD 55/16
PSD 55/18
PSD 55
I
dAVM
V
RRM
= 58 A
= 800-1800 V
~
~
~
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 85°C, module
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
58
750
820
670
740
2800
2820
2250
2300
-40 ... + 150
150
-40 ... + 150
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
°C
°C
°C
V
∼
V
∼
Nm
Nm
g
2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
Package with screw terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Blocking voltage up to 1800 V
•
Low forward voltage drop
•
UL
registered E 148688
Applications
•
S
upplies for DC power equipment
•
I
nput rectifiers for PWM inverter
•
B
attery DC power supplies
•
F
ield supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M5)
(M5)
2500
3000
5
3
205
Mounting torque
Terminal connection torque
typ.
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
Characteristic Value
≤
≤
≤
0.3
10.0
1.6
0.85
8
2.7
0.45
3.06
0.51
7.8
7.8
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
F
= 150 A
T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 55
IF(OV)
------
IFSM
60
A T=150°C
50
40
30
20
10
IF
T=25°C
IFSM (A)
TVJ=45°C
TVJ=150°C
750
670
4
10
2
As
1.6
1.4
1.2
1
TVJ=45°C
10
3
TVJ=150°C
0 VRRM
0.8
1/2 VRRM
0
0.6
1 VRRM
VF
1
V
1.5
10
2
1
2
4
t [ms]
6
10
0.4
10
0
1
2
10 t[ms] 10
10
3
Fig. 1 Forward current versus
voltage drop per diode
200
[W]
175
150
125
100
75
50
25
PVTOT
0
10
IFAVM
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
65
0.17 0.05
0.3
= RTHCA [K/W]
70
75
80
85
90
95
100
105
110
115
120
125
60
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
PSD 55
70
[A]
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
0.55
1.05
30
2.55
130
135
140
145
10
IdAV
0
50
100
T (°C)
C
150
200
°C
150
Tamb
50
100
[K]
150
0
50
[A]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
4
K/W
Z thJK
Fig.5 Maximum forward current
at case temperature
3
ZthJC
2
1
Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Analog electronics
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