Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
V
RSM
V
DSM
V
900
1300
1500
1700
V
RRM
V
DRM
V
800
1200
1400
1600
Version 1
PSKT 26/08io1
PSKT 26/12io1
PSKT 26/14io1
PSKT 26/16io1
Version 8
PSKT
PSKT
PSKT
PSKT
Type
PSKT 26
PSKH 26
I
TRMS
I
TAVM
V
RRM
= 2x 50 A
= 2x 32 A
= 800-1600 V
TO-240 AA
Version 8
PSKH
PSKH
PSKH
PSKH
26/08io8
26/12io8
26/14io8
26/16io8
1
2
3
6
7
4
5
26/08io8
26/12io8
26/14io8
26/16io8
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 75°C;
T
C
= 85°C;
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
180° sine
180° sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
50
32
27
520
560
460
500
1350
1300
1050
1030
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
A/µs
V/µs
●
3
6 7 1
5 4 2
PSKT
Version 1
3
6 1
5 2
PSKT
Version 8
3
1
5 2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
PSKH
Version 8
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 45 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 300 µs
Features
●
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
W
W
W
V
°C
°C
°C
V~
V~
●
●
●
●
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Gate-cathode twin pins for version 1
Applications
●
●
●
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Advantages
●
●
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 80 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
3
1.64
0.85
11.0
1.5
1.6
100
200
0.2
10
450
200
2
typ.
150
50
6
0.88
0.44
1.08
0.54
12.7
9.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
V
G
10
1: I
GT
, T
VJ
= 125°C
V
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1
1
2
3
5
4
6
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200 µs; -di/dt = 10 A/µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 25 A, -di/dt = 0.64 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
5: P
GM
=
5W
6: P
GM
= 10 W
10
2
10
3
I
G
mA
µs
µs
0.1
10
0
10
1
mA
10
4
Fig. 1 Gate trigger characteristics
1000
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
t
gd
T
VJ
= 25°C
µs
typ.
other values
see Fig. 8/9
100
Limit
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
10
Optional accessories for module-type PSKT 26 version 1
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
1
10
100
mA
I
G
1000
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT/ PSKH Version 1
PSKT Version 8
PSKH Version 8
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKT 26 or
3 x PSKH 26
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 26 or
3 x PSKH 26
PSKT 26
PSKH 26
Z
thJC
(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.88
0.92
0.95
0.98
1.01
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.019
0.029
0.832
t
i
(s)
0.0031
0.0216
0.191
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
PSKT 26
PSKH 26
Z
thJK
(t)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
1.08
1.12
1.15
1.18
1.21
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.019
0.029
0.832
0.2
t
i
(s)
0.0031
0.0216
0.191
0.45
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
京公网安备 11010802033920号
EEWORLD
