Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 56
PSKH 56
I
TRMS
I
TAVM
V
RRM
= 2 x 100 A
= 2 x 64 A
= 800-1800 V
1
2
3
6
7
4
TO-240 AA
5
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
Version 1
PSKT
PSKT
PSKT
PSKT
PSKT
56/08io1
56/12io1
56/14io1
56/16io1
56/18io1
PSKH 56/08io1
PSKH 56/12io1
--
PSKH 56/16io1
--
Version 8
PSKT
PSKT
PSKT
PSKT
PSKT
56/08io8
56/12io8
56/14io8
56/16io8
56/18io8
PSKH 56/08io8
PSKH 56/12io8
PSKH 56/14io8
PSKH 56/16io8
PSKH 56/18io8
3
6 7 1
5 4 2
PSKT
Version 1
3
1
5 42
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 83°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
100
64
60
1500
1600
1350
1450
11 200
10 750
9100
8830
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
PSKH
Version 1
3
6 1
5 2
PSKT
Version 8
3
1
5 2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
PSKH
Version 8
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 150 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 300 µs
Features
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
Applications
●
●
●
●
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
●
●
●
●
●
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Gate-cathode twin pins for version 1
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Advantages
●
●
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 200 A; T
VJ
= 25°C
Characteristic Values
5
1.57
0.85
3.7
1.5
1.6
100
200
0.2
10
450
200
2
typ.
150
100
24
other values
see Fig. 8/9
0.45
0.225
0.65
0.325
12.7
9.6
50
mA
V
V
m
Ω
V
V
mA
mA
V
mA
mA
V
G
10
1: I
GT
, T
VJ
= 125°C
V
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
T
VJ
T
VJ
T
VJ
=
=
=
=
25°C
-40°C
25°C
-40°C
1
1
2
3
5
4
6
V
D
= 2/3 V
DRM
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 µs; -di/dt = 10 A/µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 50 A, -di/dt = 3 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
5: P
GM
=
5W
6: P
GM
= 10 W
10
2
10
3
I
G
mA
µs
µs
0.1
10
0
10
1
mA
10
4
Fig. 1 Gate trigger characteristics
1000
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
t
gd
T
VJ
= 25°C
µs
typ.
100
Limit
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
10
1
10
100
mA
I
G
1000
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT/PSKH Version 1
PSKT Version 8
PSKH Version 8
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKT 56 or
3 x PSKH 56
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 56 or
3 x PSKH 56
PSKT 56
PSKH 56
Z
thJC
(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.45
0.47
0.49
0.505
0.52
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.014
0.026
0.41
t
i
(s)
0.015
0.0095
0.175
PSKT 56
PSKH 56
Z
thJK
(t)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.65
0.67
0.69
0.705
0.72
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.014
0.026
0.41
0.2
t
i
(s)
0.015
0.0095
0.175
0.67
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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