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PHMB600BS12

Description
IGBT Module-Dual
File Size322KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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PHMB600BS12 Overview

IGBT Module-Dual

QS043-402-(2/5)
IGBT
M½½½½½-S½½½½½
□ 回 路 図 :
CIRCUIT
PHMB600BS12
600 A,1200V
PHMB600BS12C
108
93
9
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
110
4 - Ø6.5
93
± 0 .2 5
2 -M8
4 - Ø6.5
4
2 -M6
1
20
(E)
4
(G)
3
4
3
3
2 -M4
13
21
29
2 -M4
24
11
20
29
- 0.5
36
+1.0
+1.0
25.5
- 0.5
23
7
PH MB600BS12
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting
Torque
Busbar to Terminals
DC
1½½
PH MB600BS12C
Dimension:[mm½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
PHMB600BS12
M4
M8
I½½½
R½½½½
V½½½½
7
23
LABEL
25.5
LABEL
13
14
16
1,200
±20
600
1,200
3,600
-40½+150
-40½+125
2,500
1 4(14 3)
PHMB600BS12C
10 5(107)
62
(E)
2
(C)
1
2
20
20
62
± 0 .2 5
80
2
48
1
U½½½
(RMS)
3 3 .6
( 0 )
M4 1 4(14 3)
(kgf½cm)
M6 3(30 6)
3 3 .6
( 0 )
N・½
□ 電 気 的 特 性
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 600A,V
GE
= 15V
CE
= 5V,I
= 600mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 1.0Ω
G
= 2.7Ω
GE
= ±15V
M½½.
4.0
T½½.
2.3
37,800
0.25
0.40
0.25
0.80
M½½.
6.0
1.0
2.7
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
600
1,200
T½½½ C½½½½½½½½
= 600A,V
GE
= 0V
= 600A,V
GE
= -10V
½i/½t= 1200A/μs
M½½.
T½½.
2.2
0.2
M½½.
2.6
0.3
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
M½½.
T½½.
M½½. U½½½
0.035
℃/W
0.071
00
日本インター株式会社

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