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BUZ900D

Description
16A, 160V, N-CHANNEL, Si, POWER, MOSFET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size2MB,41 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUZ900D Overview

16A, 160V, N-CHANNEL, Si, POWER, MOSFET, TO-3

BUZ900D Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage160 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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