IDT7M828S70CB datasheet, PDF - EEWORLD Datasheet

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IDT7M828S70CB: DescriptionSRAM Module, 128KX8, 70ns, CMOS, CDIP64; Categorystorage storage; File Size248KB，4 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7M828S70CB Overview

SRAM Module, 128KX8, 70ns, CMOS, CDIP64

IDT7M828S70CB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
Maximum access time	70 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T64
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	64
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP64,.9
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.33 A
Minimum standby current	4.5 V
Maximum slew rate	0.65 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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IDT7M828S70CB Related Products

	IDT7M828S70CB	7M826S100CB	IDT7M826S100CB
Description	SRAM Module, 128KX8, 70ns, CMOS, CDIP64	SRAM Module, 128KX8, 100ns, CMOS, CDIP64	SRAM Module, 128KX8, 100ns, CMOS, CDIP64
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	_compli	_compli
Maximum access time	70 ns	100 ns	100 ns
I/O type	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDIP-T64	R-XDIP-T64	R-XDIP-T64
JESD-609 code	e0	e0	e0
memory density	1048576 bit	1048576 bi	1048576 bi
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8
Number of terminals	64	64	64
word count	131072 words	131072 words	131072 words
character code	128000	128000	128000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP64,.9	DIP64,.9	DIP64,.9
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	260	260
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)	MIL-STD-883 Class B (Modified)	MIL-STD-883 Class B (Modified)
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	6	6
Base Number Matches	-	1	1

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