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IDT7M826S100CB

Description
SRAM Module, 128KX8, 100ns, CMOS, CDIP64
Categorystorage    storage   
File Size248KB,4 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT7M826S100CB Overview

SRAM Module, 128KX8, 100ns, CMOS, CDIP64

IDT7M826S100CB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Maximum access time100 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T64
JESD-609 codee0
memory density1048576 bi
Memory IC TypeSRAM MODULE
memory width8
Number of terminals64
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP64,.9
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B (Modified)
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature6
Base Number Matches1

IDT7M826S100CB Related Products

IDT7M826S100CB 7M826S100CB IDT7M828S70CB
Description SRAM Module, 128KX8, 100ns, CMOS, CDIP64 SRAM Module, 128KX8, 100ns, CMOS, CDIP64 SRAM Module, 128KX8, 70ns, CMOS, CDIP64
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code _compli _compli not_compliant
Maximum access time 100 ns 100 ns 70 ns
I/O type SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDIP-T64 R-XDIP-T64 R-XDIP-T64
JESD-609 code e0 e0 e0
memory density 1048576 bi 1048576 bi 1048576 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE
memory width 8 8 8
Number of terminals 64 64 64
word count 131072 words 131072 words 131072 words
character code 128000 128000 128000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 128KX8 128KX8 128KX8
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material CERAMIC CERAMIC CERAMIC
encapsulated code DIP DIP DIP
Encapsulate equivalent code DIP64,.9 DIP64,.9 DIP64,.9
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 225
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 Class B (Modified) MIL-STD-883 Class B (Modified) MIL-STD-883 Class B (Modified)
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 6 6 30
Base Number Matches 1 1 -
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