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IDT7MP1023S40Z

Description
Multi-Port SRAM Module, 64KX8, 40ns, CMOS, PZIP64
Categorystorage    storage   
File Size445KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT7MP1023S40Z Overview

Multi-Port SRAM Module, 64KX8, 40ns, CMOS, PZIP64

IDT7MP1023S40Z Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-PZIP-T64
JESD-609 codee0
memory density524288 bit
Memory IC TypeMULTI-PORT SRAM MODULE
memory width8
Number of ports2
Number of terminals64
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP64/68,.1,.1
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum standby current0.065 A
Minimum standby current4.5 V
Maximum slew rate0.66 mA
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperature30

IDT7MP1023S40Z Related Products

IDT7MP1023S40Z IDT7MP1023S65Z 7MP1023S65Z IDT7MP1021S40Z IDT7MP1021S50Z IDT7MP1021S65Z IDT7MP1023S50Z
Description Multi-Port SRAM Module, 64KX8, 40ns, CMOS, PZIP64 Multi-Port SRAM Module, 64KX8, 65ns, CMOS, PZIP64 Multi-Port SRAM Module, 64KX8, 65ns, CMOS, PZIP64 Application Specific SRAM, 128KX8, 40ns, CMOS, PZIP64 Multi-Port SRAM Module, 128KX8, 50ns, CMOS, PZIP64 Multi-Port SRAM Module, 128KX8, 65ns, CMOS, PZIP64 Multi-Port SRAM Module, 64KX8, 50ns, CMOS, PZIP64
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
Maximum access time 40 ns 65 ns 65 ns 40 ns 50 ns 65 ns 50 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PZIP-T64 R-PZIP-T64 R-PZIP-T64 R-PZIP-T64 R-PZIP-T64 R-PZIP-T64 R-PZIP-T64
JESD-609 code e0 e0 e0 e0 e0 e0 e0
memory density 524288 bit 524288 bit 524288 bit 1048576 bit 1048576 bit 1048576 bit 524288 bit
Memory IC Type MULTI-PORT SRAM MODULE MULTI-PORT SRAM MODULE MULTI-PORT SRAM MODULE APPLICATION SPECIFIC SRAM MULTI-PORT SRAM MODULE MULTI-PORT SRAM MODULE MULTI-PORT SRAM MODULE
memory width 8 8 8 8 8 8 8
Number of ports 2 2 2 2 2 2 2
Number of terminals 64 64 64 64 64 64 64
word count 65536 words 65536 words 65536 words 131072 words 131072 words 131072 words 65536 words
character code 64000 64000 64000 128000 128000 128000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 64KX8 64KX8 64KX8 128KX8 128KX8 128KX8 64KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code ZIP ZIP ZIP ZIP ZIP ZIP ZIP
Encapsulate equivalent code ZIP64/68,.1,.1 ZIP64/68,.1,.1 ZIP64/68,.1,.1 ZIP64/68,.1,.1 ZIP64/68,.1,.1 ZIP64/68,.1,.1 ZIP64/68,.1,.1
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225 225
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.065 A 0.065 A 0.065 A 0.125 A 0.125 A 0.125 A 0.065 A
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.66 mA 0.66 mA 0.66 mA 0.94 mA 0.94 mA 0.94 mA 0.66 mA
surface mount NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG
Maximum time at peak reflow temperature 30 30 30 30 30 30 30
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