Medium Power Transistor (−60V,
−2A)
2SB1561
Features
1) Low saturation voltage , typically
V
CE (sat)
=
−0.15V
at I
C
/ I
B
=
−1A
/
−50mA.
2) Collector-emitter voltage =
−60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SD2391.
Dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5
4.0
0.4
0.4
1.5
0.5
1.5
3.0
0.4
(1)Base
(2)Collector
(3)Emitter
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
+
Limits
−60
−60
−6
−2
−6
0.5
2
150
−55
to
+150
Unit
V
V
V
A
A
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
+
∗
1
∗
2
°C
°C
∗1
Single pulse, Pw=10ms
∗2
When mounted on a 40 40 0.7mm ceramic board.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE1
h
FE2
f
T
Cob
Min.
−60
−60
−6
−
−
−
120
45
−
−
Typ.
−
−
−
−
−
−0.15
−
−
200
23
Max.
−
−
−
−0.1
−0.1
−0.35
270
−
−
−
Unit
V
V
V
μA
μA
V
−
−
MHz
pF
I
C
=−50μA
I
C
=−1mA
I
E
=−50μA
V
CB
=−50V
Conditions
V
EB
=−5V
I
C
/I
B
=−1A/−50mA
V
CE
/I
C
=−2V/−0.5A
V
CE
/I
C
=−2V/−1.5A
V
CE
=−2V,
I
E
=0.5A,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
∗
∗
Packaging
specifications and h
FE
Type
2SB1561
MPT3
Q
BL
∗
T100
1000
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.A
2SB1561
Electrical characteristic curves
−2.0
A
mA
A
8m
16
2m
−
1
−
mA
−
1
A
14
10m
−
−
8mA
−
Data Sheet
−5
COLLECTOR CURRENT : l
C
(A)
COLLECTOR CURRENT : I
C
(A)
−
m
20
A
V
CE
=
−
2V
1000
500
V
CE
=2V
Ta=100
°C
25
°C
−40°C
−2
−1
−0.5
−1.6
−1.2
−0.8
DC CURRENT GAIN : h
FE
−1.2
−1.6
200
100
50
20
10
5
2
25
°
C
−0.1
−0.05
−0.02
−0.01
−5m
−2m
−1m
0
I
B
=−2mA
−0.4
Ta
=
1
0
−
4mA
−
40
°
C
−0.2
0
°
C
−
6mA
0.0
0
−1
−2
−3
−4
−5
−0.4
−0.8
1
−5m −10m−100m
−100m
−1
−5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
1000
500
Ta=25
°C
−1000
−500
−200
−100
−50
−20
−10
−5
−2
−1
−5m −10m−100m
−100m
−1
Ta=100°C
25°C
−40°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
I
C
/I
B
=20
−1000
−500
−200
−100
−50
−20
−10
−5
−2
−1
−5m −10m−100m
−100m
−1
I
C
/I
B
=50
20
10
Ta=25°C
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
−5m −10m−100m
−100m
V
CE
= −5V
−2V
−1V
−1
−5
−5
−5
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current (
ΙΙ
)
Fig.5 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
1000
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
2m
5m 10m 20m
500
Cib
200
100
50
20
10
5
2
1
−0.1
−1
−10
Cob
COLLECTOR CURRENT : l
C
(A)
Ta=25°C
V
CE
=−2V
1000
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
50
20
10
Ic max(Pulse)
P
W
5
2
1
500m
DC
=
1
Pw
=
1
00
ms
=
1
P
W
s
0m
m
s
200m
100m
50m
50m 100m200m 500m 1
2
−100
20m
Ta=25°C
Single pulse
10m
0.2 0.5 1 2
5
10 20
50 100 200 500
EMITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth product
vs. emitter current
Fig.8 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.9 Safe operating area
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○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.A
Notice
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However, should you incur any damage arising from any inaccuracy or misprint of such
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