High-current gain Power Transistor (60V, 3A)
2SD2318
Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. V
CE
(sat) =0.5V at I
C
/ I
B
=2A / 0.5A)
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Single pulse P
W
=100ms
Dimensions
(Unit : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
60
6
3
4.5
1
15
150
−55
to
+150
Unit
1.0
0.5
0.5
V
V
A
A(Pulse)
W
W(T
C
=25°C)
°C
°C
1.5
2.5
9.5
∗
ROHM : CPT3
EIAJ : SC-63
Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2318
CPT3
UV
TL
2500
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured
using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
80
60
6
−
−
−
−
560
−
−
Typ.
−
−
−
−
−
−
−
−
50
60
Max.
−
−
−
100
100
1.0
1.5
1800
−
−
Unit
V
V
V
μA
μA
V
V
−
MHz
pF
Conditions
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=80V
V
EB
=6V
I
C
/I
B
=2A/0.05A
I
C
/I
B
=2A/0.05A
V
CE
/I
C
=4V/0.5A
V
CE
=5V,
I
E
=−0.2A,
f=10MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
∗
∗
∗
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c
○
2010 ROHM Co., Ltd. All rights reserved.
2.3
V
5.1
6.5
C0.5
0.8Min.
(1) Base
(2) Collector
(3) Emitter
1/2
2010.01 - Rev.B
2SD2318
Electrical
characteristic curves
3.0
50mA
A
mA
COLLECTOR CURRENT : I
C
(A)
Data Sheet
10
5
COLLECTOR CURRENT : I
C
(A)
45mA
2.5 40mA
2.0
1
5m
10
V
CE
=4V
DC CURRENT GAIN : h
FE
10000
5000
2000
1000
500
200
100
50
20
Ta=25°C
2
0
I
B
=5mA
20mA
V
CE
=5V
4V
1.0
0.5
0
0
30mA
35mA
0.2
0.1
0.05
0.02
Ta=25°C
1
2
3
4
5
6
0.01
0
Ta=10
0
−
25
°C
1.5
25mA
°
C
25
°
C
0.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.010.02 0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
BE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
10000
5000
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=4V
Ta=25°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
10
5
2
0
0.5
0.2
0.1
0.05
0.02
0.01
0.010.02 0.05 0.1 0.2
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.010.02 0.05 0.1 0.2
25
°C
Ta=-25
°C
25
°C
I
C
/I
B
=40
2000
1000
500
200
100
50
20
Ta=100°C
V
BE(sat)
25°C
−25°C
I
C
/I
B
=50
40
V
CE(sat)
100°C
-25
°C
10
0.010.02 0.05 0.1 0.2
0.5
1
2
5
10
0.5
1
2
5
10
0.5
1
2
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6 Collector-emitter saturation voltage
Base-emitter saturation voltage -Collector current
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
1000
TRANSITION FREQUENCY : f
T
(MHz)
COLLECTOR CURRENT : I
C
(A)
500
200
100
50
20
10
5
2
1
−0.001
Ta=25°C
V
CE
=5V
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
Ta=25°C
f=1MHz
I
E
=0A
5
2
1
0.5
I
C
M
ax
(Pulse
∗
)
Pw
=1
∗
ms
Pw
=1
10
∗
s
0m
∗
s
0m
DC
0.2
0.1
0.05
0.02
−0.01
−0.1
−1
0.5
1
2
5
10 20
50 100
0.01
0.1 0.2
Ta=25
°C
∗
Single
nonrepetitive
pulse
0.5
1
2
5
10
20
50 100
ENITTER CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Resistance ratio vs. collector current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area
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c
○
2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.01 - Rev.B
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