Power Management Switch IC Series for PCs and Digital Consumer Product
MOSFET Controller IC
for Load Switching
BD2270HFV
No.09029EAT01
●Description
The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel
MOSFET drive without using any external parts.
In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up
sequence. The space saving type of HVSOF5 package is used.
●Features
1) Built-in charge pump
2) Built-in discharge circuit for output charge
3) Soft start circuit
4) Built-in comparator with hysteresis function at control input terminal
5) Compact HVSOF5 package
6) Operating current 50μA
7) Standby current 5μA
8) Possible to drive N-channel power MOSFET
●Applications
PCs, PC peripheral devices, digital consumer electronics, etc.
●Absolute
Maximum Ratings
Parameter
Supply voltage
AEN voltage
DISC voltage
GATE voltage
Storage temperature range
Power dissipation
Symbol
V
CC
V
AEN
V
DISC
V
GATE
T
STG
Pd
Limits
-0.3 ~ 6.0
-0.3 ~ 6.0
-0.3 ~ 6.0
-0.3 ~ 15.0
-55 ~ 150
669
*1
Unit
V
V
V
V
°C
mW
*1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta½25C
*2 This IC is not designed to be radiation-proof.
●Operating
Conditions
Parameter
Operating voltage range
Operating temperature range
Symbol
V
CC
T
OPR
Limits
2.7 ~ 5.5
-25 ~ 85
Unit
V
°C
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© 2009 ROHM Co., Ltd. All rights reserved.
1/12
2009.04 - Rev.A
BD2270HFV
●Electrical
Characteristics
(Vcc =3.0V, Ta=25°C unless otherwise specified)
Limits
Parameter
Operating current
Standby current
Symbol
Min.
I
CC
I
STB
-
-
Typ.
50
5
Max.
75
10
μA
μA
V
AEN
= 2.5V
V
AEN
= 0V
Unit
Technical Note
Condition
V
AENH
AEN input voltage
V
AENL
AEN input current
I
AEN
1.55
1.35
-
2
1.9
3
2.45
2.35
5
V
V
μA
High level input
Low level input
V
AEN
= 3V
10
GATE output voltage
V
GATE
6.6
6
13.5
9.5
8.5
15
9.9
9
V
V
V
V
CC
=5V
V
CC
=3.3V
V
CC
=3V
GATE rise time
GATE fall time
T
ON
T
OFF
-
-
130
18
750
60
μs
μs
C
GATE
=500pF V
CC
=3Ｖ
V
GATE
> 4V
C
GATE
= 500pF V
CC
=3V
V
GATE
< 0.5V
DISC discharge resistance
R
DISC
-
200
300
Ω
V
AEN
=0V
●Measurement
Circuit
C
GATE
DISC
GND
VCC
AEN
ON/OFF
GATE
BD2270HFV
Fig.1 Measurement Circuit
●Timing
Diagram
V
AEN
V
AENH
T
ON2
T
ON1
V
CC
+2V
V
AENL
T
OFF
V
GATE
V
CC
+1V
0.5V
Fig.2 Timing Diagram
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© 2009 ROHM Co., Ltd. All rights reserved.
2/12
2009.04 - Rev.A
BD2270HFV
●Reference
Data
140
Ta=25°C
OPERATING CURRENT :
I
DD
[μA]
120
100
80
60
40
20
0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
120
OPERATING CURRENT :
I
DD
[μA]
100
80
60
40
20
0
-50
140
V
CC
=3.0V
Technical Note
14
OPERATING CURRENT :
I
STB
[μA]
0
50
100
AMBIENT TEMPERATURE : Ta[
℃
]
Ta=25°C
12
10
8
6
4
2
0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
Fig.3 Operating Current
AEN Enable
14
V
CC
=3.0V
12
ENABLE INPUT VOLTAGE :
V
AEN
[V]
0
2.5
3.0
Fig.4 Operating Current
AEN Enable
3.0
Fig.5 Standby Current
AEN Disable
Ta=25°C
Low to High
2.0
1.5
1.0
0.5
0.0
ENABLE INPUT VOLTAGE :
V
AEN
[V]
2.5
V
CC
=3.0V
OPERATING CURRENT :
I
STB
[μA]
10
8
6
4
2
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[
℃
]
Low to High
High to Low
High to Low
2.0
1.5
1.0
0.5
0.0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.6 Standby Current
AEN Disable
10.0
AEN INPUT CURRENT : I
AEN
[μA]
10.0
Fig.7 AEN Input Voltage
14
GATE OUTPUT VOLTAGE : V
GATE
[V]
Fig.8 AEN Input Voltage
Ta=25°C
AEN INPUT CURRENT : I
AEN
[μA]
V
CC
=3.0V
8.0
Ta=25°C
12
10
8
6
4
2
0
8.0
6.0
6.0
4.0
4.0
2.0
2.0
0.0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
0.0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
Fig.9 AEN Input Current
14
GATE OUTPUT VOLTAGE : V
GATE
[V]
V
CC
=3.0V
12
10
8
6
4
2
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.10 AEN Input Current
300
Ta=25°C
300
Fig.11 GATE Output Voltage
V
CC
=3.0V
DISC ON RESISTANCE : R
DISC
[Ω]
DISC ON RESISTANCE : R
DISC
[Ω]
250
200
150
100
50
0
2
3
4
5
SUPPLY VOLTEGE : V
CC
[V]
6
250
200
150
100
50
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[
℃
]
Fig.12 GATE Output Voltage
Fig.13 DISC ON Resistance
Fig.14 DISC ON Resistance
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© 2009 ROHM Co., Ltd. All rights reserved.
3/12
2009.04 - Rev.A
BD2270HFV
Technical Note
200
Ta=25°C, C
GATE
=500pF
200
350
V
CC
=3.0V, C
GATE
=500pF
Ta=25°C, C
GATE
=500pF
TURN ON TIME1 : T
ON1
[μs]
TURN ON TIME1 : T
ON1
[μs]
160
160
TURN ON TIME2 : T
ON2
[μs]
300
250
200
150
100
50
0
120
120
80
80
40
40
0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
Fig.15 GATE Rise Time 1
Fig.16 GATE Rise Time 1
Fig.17 GATE Rise Time 2
350
V
CC
=3.0V, C
GATE
=500pF
TURN OFF TIME : TOFF[μs]
20
20
Ta=25°C, C
GATE
=500pF
V
CC
=3.0V, C
GATE
=500pF
TURN OFF TIME : TOFF[μs]
300
TURN ON TIME2 : T
ON2
[μs]
250
200
150
100
50
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
16
16
12
12
8
8
4
4
0
2
3
4
5
SUPPLY VOLTAGE : V
CC
[V]
6
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.18 GATE Rise Time 2
Fig.19 GATE Fall Time
Fig.20 GATE Fall Time
100.0
100.0
V
CC
=5.0V
V
CC
=3.0V
GATE DRIVE CURRENT : I
G
[μA]
10.0
GATE DRIVE CURRENT : I
G
[μA]
0
2
4
6
8
10.0
1.0
1.0
0.1
0.1
0
GATE VOLTAGE ABOVE SUPPLY : V
GATE
[V]
2
4
6
GATE VOLTAGE ABOVE SUPPLY :
V
GATE
[V]
8
Fig.21 GATE Drive Current
Fig.22 GATE Drive Current
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© 2009 ROHM Co., Ltd. All rights reserved.
4/12
2009.04 - Rev.A
BD2270HFV
●Waveform
Data
V
AEN
(5V/div)
V
CC
=3.0V
C
GATE
=500pF
V
AEN
(5V/div)
V
CC
=3.0V
C
GATE
=500pF
V
AEN
(5V/div)
Technical Note
V
CC
=3.0V
C
GATE
=500pF
V
GATE
(2V/div)
V
GATE
(2V/div)
V
GATE
(2V/div)
TIME (1ms/div)
TIME (100μs/div)
TIME (5μs/div)
Fig.23 GATE Rise / Fall Characteristics
Fig.24 GATE Rise Characteristics
Fig.25 GATE Fall Characteristics
V
AEN
(5V/div)
V
CC
=3.0V
RTF025N03
V
GATE
V
AEN
(5V/div)
V
CC
=3.0V
RTF025N03
V
GATE
V
AEN
(5V/div)
V
CC
=3.0V
RTF025N03
CL = 100
μ
F
V
GATE
V
OUT_SWITCH
(2V/div)
(2V/div)
V
OUT_SWITCH
(2V/div)
V
OUT_SWITCH
TIME (100μs/div)
TIME (5μs/div)
TIME (20ms/div)
Fig.26 GATE Switch Rise
Characteristics
Fig.27 GATE Switch Fall
Characteristics
Fig.28 GATE Switch Fall
Characteristics
V
AEN
(5V/div)
V
CC
=3.0V
RSS130N03
V
AEN
(5V/div)
V
CC
=3.0V
RSS130N03
V
GATE
V
OUT_SWITCH
(2V/div)
(2V/div)
V
GATE
V
OUT_SWITCH
TIME (100μs/div)
TIME (10μs/div)
Fig.29 GATE Switch Rise
Characteristics
MOSFET : RTF025N03
RSS130N03
3.3V
V
IN_SWIT CH
V
OUT_SWIT CH
CL
Fig.30 GATE Switch Fall
Characteristics
1uF
GATE
VCC
ON/OFF
AEN
DISC
GND
BD2270HFV
Fig.31 Switch Rise / Fall Characteristics
Measurement Circuit Diagram
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© 2009 ROHM Co., Ltd. All rights reserved.
5/12
2009.04 - Rev.A
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