APTM120U10SCAVG
Single switch
Series & SiC parallel diodes
MOSFET Power Module
D
V
DSS
= 1200V
R
DSon
= 100mΩ typ @ Tj = 25°C
I
D
= 116A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
DK
G
SK
S
G, SK and DK terminals are for control signals only
(not for power)
•
SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Kelvin source for easy drive
Kelvin drain for voltage monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
- M3 power connectors
High level of integration
AlN substrate for improved MOSFET thermal
performance
•
•
•
DK
S
D
•
•
SK
G
All ratings @ T
j
= 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–9
APTM120U10SCAVG – Rev 3
October, 2013
Benefits
•
Outstanding performance at high frequency
operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Low profile
•
RoHS Compliant
APTM120U10SCAVG
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
1200
116
86
464
±30
120
3290
24
50
3200
Unit
V
A
V
mΩ
W
A
mJ
T
c
= 25°C
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 1200V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25°C
T
j
= 125°C
Min
Typ
V
GS
= 10V, I
D
= 58A
V
GS
= V
DS
, I
D
= 20mA
V
GS
= ±30 V, V
DS
= 0V
100
3
Max
1
3
120
5
±400
Unit
mA
mΩ
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Junction to Case Thermal Resistance
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 600V
I
D
= 116A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 800V
I
D
= 116A
R
G
=1.2Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 800V
I
D
= 116A, R
G
= 1.2Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 800V
I
D
= 116A, R
G
= 1.2Ω
Min
Typ
28.9
4.4
0.8
1100
128
716
20
17
245
62
3
4.6
5.5
5.6
0.038
mJ
ns
nC
Max
Unit
nF
mJ
°C/W
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2–9
APTM120U10SCAVG – Rev 3
October, 2013
APTM120U10SCAVG
Series diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
Test Conditions
Min
1000
500
T
c
= 100°C
Typ
Max
Unit
V
µA
A
V
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
V
R
=1000V
DC Forward Current
I
F
= 240A
I
F
= 480A
Diode Forward Voltage
I
F
= 240A
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
I
F
= 240A
V
R
= 667V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
240
1.9
2.2
1.7
280
350
3
14.4
2.5
t
rr
Q
rr
R
thJC
ns
µC
0.19
°C/W
di/dt = 800A/µs
SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
Q
C
C
R
thJC
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
T
j
= 25°C
I
F
= 90A
T
j
= 175°C
I
F
= 90A, V
R
= 1200V
di/dt = 4500A/µs
V
R
=1200V
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
Min
1200
Typ
288
504
90
1.6
2.3
720
864
621
0.22
Max
1800
9000
1.8
3
Unit
V
µA
A
V
nC
pF
°C/W
Thermal and package characteristics
Symbol
V
ISOL
T
J
T
JOP
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
M6
To heatsink
M5
Mounting torque
For terminals
M3
Package Weight
Min
4000
-40
-40
-40
-40
3
2
1
Max
150
T
J
max -25
125
100
5
3.5
1.5
300
Unit
V
°C
g
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3–9
APTM120U10SCAVG – Rev 3
October, 2013
N.m
APTM120U10SCAVG
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
4–9
APTM120U10SCAVG – Rev 3
October, 2013
APTM120U10SCAVG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.04
Thermal Impedance (°C/W)
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.00001
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
280
240
V
GS
=15, 10V
Transfert Characteristics
320
280
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
I
D
, Drain Current (A)
I
D
, Drain Current (A)
7V
200
160
120
80
40
0
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
1.4
1.3
1.2
1.1
1
0.9
0.8
0
40
80
120
160
200
240
I
D
, Drain Current (A)
V
GS
=20V
Normalized to
V
GS
=10V @ 58A
4.5V
6V
5.5V
240
200
160
120
80
40
T
J
=125°C
T
J
=25°C
5V
30
0
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
R
DS
(on) Drain to Source ON Resistance
I
D
, DC Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
October, 2013
5–9
APTM120U10SCAVG – Rev 3
V
GS
=10V
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