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IS61LV12816LL-12BI

Description
Standard SRAM, 128KX16, 12ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
Categorystorage    storage   
File Size107KB,16 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric Compare View All

IS61LV12816LL-12BI Overview

Standard SRAM, 128KX16, 12ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS61LV12816LL-12BI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instruction6 X 8 MM, MINI, BGA-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length8 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.0009 A
Minimum standby current2 V
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)2.97 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
IS61LV12816L
IS61LV12816LL
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time:
IS61LV12816L: 8, 10 ns
IS61LV12816LL: 12 ns
• Operating Current:
IS61LV12816L: 50mA (typ.)
IS61LV12816LL: 30mA (typ.)
• Stand by Current:
IS61LV12816L: 700µA (typ.)
IS61LV12816LL: 400µA(typ.)
• TTL and CMOS compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
ISSI
JUNE 2003
®
DESCRIPTION
The
ISSI
IS61LV12816L/IS61LV12816LL is a high-speed,
2,097,152-bit static RAM organized as 131,072 words by
16 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields access
times as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816L/IS61LV12816LL is packaged in the
JEDEC standard 44-pin TSOP (Type II), 44-pin LQFP, and
48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128Kx16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/28/03
1

IS61LV12816LL-12BI Related Products

IS61LV12816LL-12BI IS61LV12816L-8BI IS61LV12816L-10T IS61LV12816L-8T IS61LV12816L-8B IS61LV12816L-8LQI
Description Standard SRAM, 128KX16, 12ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48 Standard SRAM, 128KX16, 8ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48 128KX16 STANDARD SRAM, 10ns, PDSO44, PLASTIC, TSOP2-44 128KX16 STANDARD SRAM, 8ns, PDSO44, PLASTIC, TSOP2-44 Standard SRAM, 128KX16, 8ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48 Standard SRAM, 128KX16, 8ns, CMOS, PQFP44, MS-026, LQFP-44
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code BGA BGA TSOP2 TSOP2 BGA QFP
package instruction 6 X 8 MM, MINI, BGA-48 TFBGA, BGA48,6X8,30 PLASTIC, TSOP2-44 PLASTIC, TSOP2-44 6 X 8 MM, MINI, BGA-48 MS-026, LQFP-44
Contacts 48 48 44 44 48 44
Reach Compliance Code compliant compliant compliant compliant compliant unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 12 ns 8 ns 10 ns 8 ns 8 ns 8 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PDSO-G44 R-PDSO-G44 R-PBGA-B48 S-PQFP-G44
JESD-609 code e0 e0 e0 e0 e0 e0
length 8 mm 8 mm 18.415 mm 18.415 mm 8 mm 10 mm
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1
Number of terminals 48 48 44 44 48 44
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 70 °C 70 °C 85 °C
organize 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TSOP2 TSOP2 TFBGA LQFP
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30 TSOP44,.46,32 TSOP44,.46,32 BGA48,6X8,30 QFP44,.47SQ,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.6 mm
Maximum standby current 0.0009 A 0.004 A 0.003 A 0.003 A 0.003 A 0.004 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.045 mA 0.07 mA 0.06 mA 0.065 mA 0.065 mA 0.07 mA
Maximum supply voltage (Vsup) 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V
Minimum supply voltage (Vsup) 2.97 V 3.135 V 2.97 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL GULL WING GULL WING BALL GULL WING
Terminal pitch 0.75 mm 0.75 mm 0.8 mm 0.8 mm 0.75 mm 0.8 mm
Terminal location BOTTOM BOTTOM DUAL DUAL BOTTOM QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 6 mm 6 mm 10.16 mm 10.16 mm 6 mm 10 mm

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