QSH29
Transistors
Dual digital transistors
QSH29
Features
In addition to the standard features of digital transistor,
this transisitor has:
1) Low collector saturation voltage, typically
V
CE (sat)
=100mV for I
C
/ I
B
=100mA / 1mA(Typ.)
2) High current gain, minimum
h
FE
=500mA for V
CE
=5V, I
C
=200mA.
3) Built in Zener diode for protection against surges when
connected to inductive load.
Dimensions
(Unit : mm)
TSMT6
Abbreviated symbol : H29
Structure
NPN silicon epitaxial planar transistor
Applications
Driver
Packaging specifications and h
FE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
QSH29
TSMT6
Taping
TR
3000
Equivalent circuit
(6)
(5)
R
Di
DTr1
Di
R
DTr2
(1) : Emitter
(2) : Base
(3) : Collector
(4) : Emitter
(5) : Base
(6) : Collector
(DTr1)
(DTr1)
(DTr2)
(DTr2)
(DTr2)
(DTr1)
(4)
R=10kΩ
(1)
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
<<
DTr1
>> <<
DTr2
>>
Parameter
Symbol
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
Continuous
I
C
Collector current
Pulsed
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
D
Tj
Tstg
Unit
Limits
V
60±10
V
60±10
5
V
500
mA
∗1
1
A
1.25
W/TOTAL
∗2
0.9
W/1 ELEMENT
∗2
150
°C
−55
to
+150
°C
∗1
Pw=10ms 1 Pulse
∗2
Each terminal mounted on a ceramic board
1/3
QSH29
Transistor
Electrical characterristic curves
1
V
CE
=2V
125˚C
25˚C
−40˚C
0.1
500
Ta=25˚C
I
B
=600uA
10000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(A)
I
B
=500uA
V
CE
=5V
DC CURRENT GAIN : h
FE
400
I
B
=400uA
I
B
=300uA
I
B
=200uA
1000
−
40
°
C
25
°
C
125
°
C
300
100
200
0.01
10
100
I
B
=100uA
0.001
0.1
1
10
0
0
1
2
3
4
5
6
7
8
9
10
1
0.001
0.01
0.1
1
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs.
Collector Current
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
1
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
Ta=25˚C
BASE EMITTER SATURATION VOLTAGE
: V
BE
(sat) (V)
10
10
Ic/Ib=100/1
10
Ic/Ib=10/1
Ic/Ib=200/1
Ic/Ib=150/1
Ic/Ib=100/1
1
125
°
C
25
°
C
−
40
°
C
1
−40˚C
25˚C
125˚C
0.1
0.1
0.01
0.01
0.1
1
0.01
0.01
0.1
1
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
Fig.6 Base-emitter Saturation
Voltage vs. Collector Current
10
COLLECTOR CURRENT : I
C
(A)
Ta=25˚C
Pulsed
1
DC (Ta=25˚C)
0.1
10ms
100ms
0.01
1ms
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Safe Operating Area
3/3
Appendix
Notes
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