P4C163L-35FM datasheet, PDF - EEWORLD Datasheet

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P4C163L-35FM: DescriptionStandard SRAM, 8KX9, 35ns, CMOS, CDFP28, CERAMIC, DFP-28; Categorystorage storage; File Size85KB，8 Pages; ManufacturerPyramid Semiconductor Corporation; Websitehttp://www.pyramidsemiconductor.com/

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P4C163L-35FM Overview

Standard SRAM, 8KX9, 35ns, CMOS, CDFP28, CERAMIC, DFP-28

P4C163L-35FM Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Pyramid Semiconductor Corporation
Parts packaging code	DFP
package instruction	DFP, FL28,.4
Contacts	28
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-GDFP-F28
JESD-609 code	e0
memory density	73728 bit
Memory IC Type	STANDARD SRAM
memory width	9
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX9
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DFP
Encapsulate equivalent code	FL28,.4
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	2.286 mm
Maximum standby current	0.0002 A
Minimum standby current	2 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.017 mm

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P4C163/163L

P4C163/P4C163L

ULTRA HIGH SPEED 8K x 9

STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 25/35ns (Commercial)

– 25/35/45ns (Military)

Low Power Operation (Commercial/Military)

– 690/800 mW Active – 25

– 193/220 mW Standby (TTL Input)

– 5.5 mW Standby (CMOS Input) P4C163L

Output Enable and Dual Chip Enable Control

Functions

Single 5V

10% Power Supply

Data Retention with 2.0V Supply, 10

A Typical

Current (P4C163L Military)

Common I/O

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

– 28-Pin 300 mil DIP, SOJ

– 28-Pin 350 x 550 mil LCC

– 28-Pin CERPACK

DESCRIPTION

The P4C163 and P4C163L are 73,728-bit ultra high-speed

static RAMs organized as 8K x 9. The CMOS memories re-

quire no clocks or refreshing and have equal access and

cycle times. Inputs are fully TTL-compatible. The RAMs op-

erate from a single 5V±10% tolerance power supply. With

battery backup, data integrity is maintained for supply volt-

ages down to 2.0V. Current drain is 10

µA

from a 2.0V supply.

Access times as fast as 25 nanoseconds are available, per-

mitting greatly enhanced system operating speeds. CMOS

is used to reduce power consumption in both active and

standby modes.

The P4C163 and P4C163L are available in 28-pin 300 mil

DIP and SOJ and 28-pin 350 x 550 mil LCC packages provid-

ing excellent board level densities.

FUNCTIONAL BLOCK DIAGRAM

ROW

SELECT

73,728-BIT

MEMORY

ARRAY

PIN CONFIGURATIONS

I/O

INPUT

DATA

CONTROL

COLUMN I/O

I/O

COLUMN

SELECT

I/O

GND

14 15 16

GND

I/O

CE 1

CE 2

DIP (P5, C5), SOJ (J5)

CERPACK (F4) SIMILAR

TOP VIEW

LCC (L5)

TOP VIEW

Means Quality, Service and Speed

1Q97

109

I/O

P4C163L-35FM Related Products

	P4C163L-35FM	P4C163L-45FM	P4C163L-25LM	P4C163L-45CM	P4C163L-25FM	P4C163L-35LM	P4C163L-35CM	P4C163L-25CM	P4C163L-45LM
Description	Standard SRAM, 8KX9, 35ns, CMOS, CDFP28, CERAMIC, DFP-28	Standard SRAM, 8KX9, 45ns, CMOS, CDFP28, CERAMIC, DFP-28	Standard SRAM, 8KX9, 25ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28	Standard SRAM, 8KX9, 45ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28	Standard SRAM, 8KX9, 25ns, CMOS, CDFP28, CERAMIC, DFP-28	Standard SRAM, 8KX9, 35ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28	Standard SRAM, 8KX9, 35ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28	Standard SRAM, 8KX9, 25ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28	Standard SRAM, 8KX9, 45ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation
Parts packaging code	DFP	DFP	QLCC	DIP	DFP	QLCC	DIP	DIP	QLCC
package instruction	DFP, FL28,.4	DFP, FL28,.4	QCCN, LCC28,.35X.55	DIP, DIP28,.3	DFP, FL28,.4	0.350 X 0.550 INCH, CERAMIC, LCC-28	0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28	0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28	0.350 X 0.550 INCH, CERAMIC, LCC-28
Contacts	28	28	28	28	28	28	28	28	28
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	35 ns	45 ns	25 ns	45 ns	25 ns	35 ns	35 ns	25 ns	45 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-GDFP-F28	R-GDFP-F28	R-CQCC-N28	R-CDIP-T28	R-GDFP-F28	R-CQCC-N28	R-CDIP-T28	R-CDIP-T28	R-CQCC-N28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	73728 bit	73728 bit	73728 bit	73728 bit	73728 bit	73728 bit	73728 bit	73728 bit	73728 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	9	9	9	9	9	9	9	9	9
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28	28
word count	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	8KX9	8KX9	8KX9	8KX9	8KX9	8KX9	8KX9	8KX9	8KX9
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DFP	QCCN	DIP	DFP	QCCN	DIP	DIP	QCCN
Encapsulate equivalent code	FL28,.4	FL28,.4	LCC28,.35X.55	DIP28,.3	FL28,.4	LCC28,.35X.55	DIP28,.3	DIP28,.3	LCC28,.35X.55
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	CHIP CARRIER	IN-LINE	FLATPACK	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.286 mm	2.286 mm	1.905 mm	5.715 mm	2.286 mm	1.905 mm	5.715 mm	5.715 mm	1.905 mm
Maximum standby current	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A	0.0002 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.12 mA	0.12 mA	0.145 mA	0.12 mA	0.145 mA	0.12 mA	0.12 mA	0.145 mA	0.12 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	NO	YES	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	NO LEAD	THROUGH-HOLE	FLAT	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	QUAD	DUAL	DUAL	QUAD	DUAL	DUAL	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	9.017 mm	9.017 mm	8.89 mm	7.62 mm	9.017 mm	8.89 mm	7.62 mm	7.62 mm	8.89 mm
length	-	-	13.97 mm	36.449 mm	-	13.97 mm	36.449 mm	36.449 mm	13.97 mm

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