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Datasheet> All Categories > storage> storage> P4C163L-35LM
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P4C163L-35LM

Description
Standard SRAM, 8KX9, 35ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28
Categorystorage    storage   
File Size85KB，8 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
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P4C163L-35LM Overview

Standard SRAM, 8KX9, 35ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28

P4C163L-35LM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerPyramid Semiconductor Corporation
Parts packaging codeQLCC
package instruction0.350 X 0.550 INCH, CERAMIC, LCC-28
Contacts28
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-CQCC-N28
JESD-609 codee0
length13.97 mm
memory density73728 bit
Memory IC TypeSTANDARD SRAM
memory width9
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX9
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC28,.35X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height1.905 mm
Maximum standby current0.0002 A
Minimum standby current2 V
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width8.89 mm

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Download Datasheet
P4C163/163L
P4C163/P4C163L
ULTRA HIGH SPEED 8K x 9
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 25/35ns (Commercial)
– 25/35/45ns (Military)
Low Power Operation (Commercial/Military)
– 690/800 mW Active – 25
– 193/220 mW Standby (TTL Input)
– 5.5 mW Standby (CMOS Input) P4C163L
Output Enable and Dual Chip Enable Control
Functions
Single 5V
±
10% Power Supply
Data Retention with 2.0V Supply, 10
µ
A Typical
Current (P4C163L Military)
Common I/O
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil DIP, SOJ
– 28-Pin 350 x 550 mil LCC
– 28-Pin CERPACK
DESCRIPTION
The P4C163 and P4C163L are 73,728-bit ultra high-speed
static RAMs organized as 8K x 9. The CMOS memories re-
quire no clocks or refreshing and have equal access and
cycle times. Inputs are fully TTL-compatible. The RAMs op-
erate from a single 5V±10% tolerance power supply. With
battery backup, data integrity is maintained for supply volt-
ages down to 2.0V. Current drain is 10
µA
from a 2.0V supply.
Access times as fast as 25 nanoseconds are available, per-
mitting greatly enhanced system operating speeds. CMOS
is used to reduce power consumption in both active and
standby modes.
The P4C163 and P4C163L are available in 28-pin 300 mil
DIP and SOJ and 28-pin 350 x 550 mil LCC packages provid-
ing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
A
0
ROW
SELECT
73,728-BIT
MEMORY
ARRAY
PIN CONFIGURATIONS
V
CC
A
2
A
1
A
0
WE
A0
A
1
A
2
A
3
A
4
A
5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
12
A
11
A
10
OE
A
9
CE
1
I/O
9
I/O
8
I/O
7
I/O
6
I/O
5
3
A3
A
4
A
5
A
6
A
7
A
8
I/O
1
I/O
2
I/O
3
4
5
6
7
8
9
10
11
12
13
2
27
26
28
1
25
24
23
22
21
20
19
CE
2
A
12
A
11
A
10
OE
A
9
CE
1
I/O
9
I/O
8
A
7
I/O
1
INPUT
DATA
CONTROL
COLUMN I/O
A
6
A
7
A
8
I/O
1
COLUMN
SELECT
I/O
9
I/O
2
I/O
3
I/O
4
GND
14 15 16
18
17
GND
I/O
5
I/O
4
I/O
6
CE 1
CE 2
WE
OE
A
8
A
12
DIP (P5, C5), SOJ (J5)
CERPACK (F4) SIMILAR
TOP VIEW
LCC (L5)
TOP VIEW
Means Quality, Service and Speed
1Q97
109
I/O
7

P4C163L-35LM Related Products

P4C163L-35LM P4C163L-45FM P4C163L-25LM P4C163L-45CM P4C163L-25FM P4C163L-35FM P4C163L-35CM P4C163L-25CM P4C163L-45LM
Description Standard SRAM, 8KX9, 35ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28 Standard SRAM, 8KX9, 45ns, CMOS, CDFP28, CERAMIC, DFP-28 Standard SRAM, 8KX9, 25ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28 Standard SRAM, 8KX9, 45ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 Standard SRAM, 8KX9, 25ns, CMOS, CDFP28, CERAMIC, DFP-28 Standard SRAM, 8KX9, 35ns, CMOS, CDFP28, CERAMIC, DFP-28 Standard SRAM, 8KX9, 35ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 Standard SRAM, 8KX9, 25ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 Standard SRAM, 8KX9, 45ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation
Parts packaging code QLCC DFP QLCC DIP DFP DFP DIP DIP QLCC
package instruction 0.350 X 0.550 INCH, CERAMIC, LCC-28 DFP, FL28,.4 QCCN, LCC28,.35X.55 DIP, DIP28,.3 DFP, FL28,.4 DFP, FL28,.4 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.350 X 0.550 INCH, CERAMIC, LCC-28
Contacts 28 28 28 28 28 28 28 28 28
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 35 ns 45 ns 25 ns 45 ns 25 ns 35 ns 35 ns 25 ns 45 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-CQCC-N28 R-GDFP-F28 R-CQCC-N28 R-CDIP-T28 R-GDFP-F28 R-GDFP-F28 R-CDIP-T28 R-CDIP-T28 R-CQCC-N28
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
memory density 73728 bit 73728 bit 73728 bit 73728 bit 73728 bit 73728 bit 73728 bit 73728 bit 73728 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 9 9 9 9 9 9 9 9 9
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28 28 28 28
word count 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words
character code 8000 8000 8000 8000 8000 8000 8000 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 8KX9 8KX9 8KX9 8KX9 8KX9 8KX9 8KX9 8KX9 8KX9
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code QCCN DFP QCCN DIP DFP DFP DIP DIP QCCN
Encapsulate equivalent code LCC28,.35X.55 FL28,.4 LCC28,.35X.55 DIP28,.3 FL28,.4 FL28,.4 DIP28,.3 DIP28,.3 LCC28,.35X.55
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER FLATPACK CHIP CARRIER IN-LINE FLATPACK FLATPACK IN-LINE IN-LINE CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.905 mm 2.286 mm 1.905 mm 5.715 mm 2.286 mm 2.286 mm 5.715 mm 5.715 mm 1.905 mm
Maximum standby current 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.12 mA 0.12 mA 0.145 mA 0.12 mA 0.145 mA 0.12 mA 0.12 mA 0.145 mA 0.12 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES NO YES YES NO NO YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form NO LEAD FLAT NO LEAD THROUGH-HOLE FLAT FLAT THROUGH-HOLE THROUGH-HOLE NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
Terminal location QUAD DUAL QUAD DUAL DUAL DUAL DUAL DUAL QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 8.89 mm 9.017 mm 8.89 mm 7.62 mm 9.017 mm 9.017 mm 7.62 mm 7.62 mm 8.89 mm
length 13.97 mm - 13.97 mm 36.449 mm - - 36.449 mm 36.449 mm 13.97 mm

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