-100mA / -50V Digital transistors
(with built-in resistor)
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTA144TM
0.2
1.2
0.32
(3)
DTA144TE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.4 0.4
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
0.8
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.8
0.2
0.22
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 96
Abbreviated symbol : 96
DTA144TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTA144TKA
2.9
0.4
(3)
1.1
1.25
2.1
(2)
(1)
0.1Min.
(2)
(1)
1.6
2.8
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
0.3Min.
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 96
Abbreviated symbol : 96
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=47kΩ
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Packaging specifications
Package
Packaging type
Code
Part No.
DTA144TM
DTA144TE
DTA144TUA
DTA144TKA
−
−
−
−
−
−
VMT3
EMT3
UMT3
SMT3
Data Sheet
Taping
T2L
8000
Taping
TL
3000
−
Taping
T106
3000
−
−
Taping
T146
3000
−
−
−
Basic ordering
unit (pieces)
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
150
Limits
DTA144TM DTA144TE DTA144TUA DTA144TKA
−50
−50
−5
−100
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
−50
−50
−5
−
−
−
100
32.9
−
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
61.1
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=−50μA
I
C
=−1mA
I
E
=−50μA
V
CB
=−50V
V
EB
=−4V
I
C
/I
B
=−5mA/−0.5mA
V
CE
=−5V,
I
C
=−1mA
−
V
CE
=−10V,
I
E
=5mA,
f=100MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Electrical characteristic curves
1k
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=−5V
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=10
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
Ta=100°C
25°C
−40°C
−1m
−10μ −20μ −50μ −100μ −200μ −500μ −1m −2m
−5m −10m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs.collector
current
Fig.2 Collector-emitter saturation
voltage vs.collector current
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2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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