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DTA144TUA

Description
-100mA / -50V Digital transistors (with built-in resistor)
CategoryDiscrete semiconductor    The transistor   
File Size133KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTA144TUA Overview

-100mA / -50V Digital transistors (with built-in resistor)

DTA144TUA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
-100mA / -50V Digital transistors
(with built-in resistor)
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTA144TM
0.2
1.2
0.32
(3)
DTA144TE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.4 0.4
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
0.8
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.8
0.2
0.22
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 96
Abbreviated symbol : 96
DTA144TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTA144TKA
2.9
0.4
(3)
1.1
1.25
2.1
(2)
(1)
0.1Min.
(2)
(1)
1.6
2.8
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
0.3Min.
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 96
Abbreviated symbol : 96
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=47kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C

DTA144TUA Related Products

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Description -100mA / -50V Digital transistors (with built-in resistor) -100mA / -50V Digital transistors (with built-in resistor) -100mA / -50V Digital transistors (with built-in resistor) -100mA / -50V Digital transistors (with built-in resistor) -100mA / -50V Digital transistors (with built-in resistor)
Is it lead-free? Lead free - Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to -
Maker ROHM Semiconductor - ROHM Semiconductor ROHM Semiconductor -
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code compli - compli compli -
ECCN code EAR99 - EAR99 EAR99 -
Other features DIGITAL, BUILT IN BIAS RESISTOR - DIGITAL, BUILT IN BIAS RESISTOR DIGITAL, BUILT IN BIAS RESISTOR -
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V - 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 100 - 100 100 -
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e1 - e1 e1 -
Number of components 1 - 1 1 -
Number of terminals 3 - 3 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 - 260 260 -
Polarity/channel type PNP - PNP PNP -
Maximum power dissipation(Abs) 0.2 W - 0.2 W 0.15 W -
Certification status Not Qualified - Not Qualified Not Qualified -
surface mount YES - YES YES -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
Terminal form GULL WING - GULL WING GULL WING -
Terminal location DUAL - DUAL DUAL -
Maximum time at peak reflow temperature 10 - 10 10 -
transistor applications SWITCHING - SWITCHING SWITCHING -
Transistor component materials SILICON - SILICON SILICON -
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