EEWORLDEEWORLDEEWORLD

Part Number

Search

FQD1N60C_09

Description
600V N-Channel MOSFET
File Size752KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Compare View All

FQD1N60C_09 Overview

600V N-Channel MOSFET

FQD1N60C / FQU1N60C
January
2009
QFET
®
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
1A, 600V, R
DS(on)
= 11.5Ω @V
GS
= 10 V
Low gate charge ( typical 4.8nC)
Low Crss ( typical 3.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS
Compliant
D
D
!
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD1N60C / FQU1N60C
600
1
0.6
4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
33
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.53
50
110
Units
°C/W
°C/W
°C/W
Rev. A1, January 2009
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation

FQD1N60C_09 Related Products

FQD1N60C_09 FQD1N60C FQU1N60C
Description 600V N-Channel MOSFET 600V N-Channel MOSFET 600V N-Channel MOSFET
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - Fairchild Fairchild
package instruction - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts - 3 3
Reach Compliance Code - compli compliant
ECCN code - EAR99 EAR99
Other features - AVALANCHE RATED, FAST SWITCHING AVALANCHE RATED, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas) - 33 mJ 33 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 600 V 600 V
Maximum drain current (Abs) (ID) - 1 A 1 A
Maximum drain current (ID) - 1 A 1 A
Maximum drain-source on-resistance - 11.5 Ω 11.5 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PSSO-G2 R-PSIP-T3
Number of components - 1 1
Number of terminals - 2 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) - 260 NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 28 W 28 W
Maximum pulsed drain current (IDM) - 4 A 4 A
Certification status - Not Qualified Not Qualified
surface mount - YES NO
Terminal form - GULL WING THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
How to automatically indent Verilog/VHDL in vim? ?
I used to use emacs, but now I want to use vim, but I am not familiar with vim settings .I set set ai in .vimrc, but I still can't get automatic indentation when editing Verilog /V HDL . When I press ...
eeleader FPGA/CPLD
BLDC motor driver based on STM32F030+L6230 (FOC5.2 library): program+schematic diagram+BOM and other open source sharing
[i=s]This post was last edited by music_586 on 2018-12-28 21:00[/i] [align=center][font=Tahoma][size=5][color=#000000]Based on STM32F030+L6230 (FOC5.2 library) BLDC motor driver: program + schematic +...
music_586 Motor Drive Control(Motor Control)
Is it possible to become a master without an emulator?
I started to learn 51 and AVR last year. I bought a development board and studied for a while. Then I bought an AVR ISP downloader online for only a few dozen yuan. I think it would be more practical ...
gh131413 Microchip MCU
I have installed the wince5 sdk. How can I open the wince simulator when developing in vs2008?
I have installed the wince5 sdk. How can I open the wince emulator when developing in vs2008? I am developing mobile phone programs....
smjw9186 Embedded System
quartusii Report a problem
[font=Verdana, Helvetica, Arial, sans-serif]I have two questions: 1. What does low 800mV 85C/0C fast 1200mV 0C mean in Quartus II? 2. In which report and where can I find the FPGA IO Timing Parameters...
Maxwell_CZH FPGA/CPLD
"MCU Engineer's Training Record" printing error 4
...
qinkaiabc Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1121  468  2812  1057  2243  23  10  57  22  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号