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FQU1N60C

Description
600V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size752KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FQU1N60C Overview

600V N-Channel MOSFET

FQU1N60C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)33 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance11.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)28 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQD1N60C / FQU1N60C
January
2009
QFET
®
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
1A, 600V, R
DS(on)
= 11.5Ω @V
GS
= 10 V
Low gate charge ( typical 4.8nC)
Low Crss ( typical 3.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS
Compliant
D
D
!
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD1N60C / FQU1N60C
600
1
0.6
4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
33
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.53
50
110
Units
°C/W
°C/W
°C/W
Rev. A1, January 2009
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation

FQU1N60C Related Products

FQU1N60C FQD1N60C_09 FQD1N60C
Description 600V N-Channel MOSFET 600V N-Channel MOSFET 600V N-Channel MOSFET
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker Fairchild - Fairchild
package instruction IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3
Reach Compliance Code compliant - compli
ECCN code EAR99 - EAR99
Other features AVALANCHE RATED, FAST SWITCHING - AVALANCHE RATED, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas) 33 mJ - 33 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V - 600 V
Maximum drain current (Abs) (ID) 1 A - 1 A
Maximum drain current (ID) 1 A - 1 A
Maximum drain-source on-resistance 11.5 Ω - 11.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 - R-PSSO-G2
Number of components 1 - 1
Number of terminals 3 - 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form IN-LINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 28 W - 28 W
Maximum pulsed drain current (IDM) 4 A - 4 A
Certification status Not Qualified - Not Qualified
surface mount NO - YES
Terminal form THROUGH-HOLE - GULL WING
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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