FQD1N60C / FQU1N60C
January
2009
QFET
®
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
•
•
•
•
•
•
1A, 600V, R
DS(on)
= 11.5Ω @V
GS
= 10 V
Low gate charge ( typical 4.8nC)
Low Crss ( typical 3.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS
Compliant
D
D
!
●
◀
▲
●
●
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD1N60C / FQU1N60C
600
1
0.6
4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
33
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.53
50
110
Units
°C/W
°C/W
°C/W
Rev. A1, January 2009
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQD1N60C / FQU1N60C
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
=
V
DS
= 40 V, I
D
=
0.5 A
0.5 A
(Note 4)
2.0
--
--
--
9.3
0.75
4.0
11.5
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
130
19
3.5
170
25
4.5
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 1.1 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 300 V, I
D
= 1.1 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
7
21
13
27
4.8
0.7
2.7
24
52
36
64
6.2
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 0.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 1.1 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
190
0.53
1
4
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59 mH, I
AS
= 1.1 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
1.1 A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A1. January 2009
FQD1N60C / FQU1N60C
Typical Characteristics
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
0
150 C
o
-55 C
25 C
o
o
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
V
GS
= 10V
20
I
DR
, Reverse Drain Current [A]
25
10
0
15
10
V
GS
= 20V
150
℃
25
℃
10
-1
5
※
Note : T
J
= 25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0.0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
250
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
200
10
V
DS
= 120V
V
DS
= 300V
C
iss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
150
V
DS
= 480V
C
oss
6
100
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
4
50
C
rss
2
※
Note : I
D
= 1A
0
-1
10
10
0
10
1
0
0
1
2
3
4
5
6
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Norm
alized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 0.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
1.2
Figure 8. On-Resistance Variation
vs Temperature
10
1
Operation in This Area
is Limited by R
DS(on)
1.0
100
µ
s
I
D
, Drain Current [A]
10
0
1 ms
10 ms
100 ms
DC
10
-1
※
Notes :
1. T
C
= 25 C
o
o
2. T
J
= 150 C
3. Single Pulse
10
-2
10
0
10
1
10
2
10
3
I
D
, Drain Current [A]
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
( t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
0 .0 2
※
N o te s :
1 . Z
θ
J C
( t) = 4 .5 3
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
P
DM
t
1
t
2
θ
JC
Z
10
-1
0 .0 1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
DUT
3mA
Q
gd
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
R
G
10V
V
GS
R
L
V
DD
V
DS
90%
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
V
DS
I
D
R
G
10V
t
p
L
BV
DSS
I
AS
V
DD
DUT
V
DD
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
I
D
(t)
V
DS
(t)
t
p
Time
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
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