BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
PNP Silicon Planar Epitaxial Transistors
1
2
3
TO-92 SMD Package
Absolute Maximum Ratings
(Ta = 25
o
C unless specified otherwise)
SYMBOL
BC556
DESCRIPTION
V
CEO
65
Collector Emitter Voltage
V
CES
Collector Emmitter Voltage
80
V
CBO
Collector Base Voltage
80
V
EBO
5
Emitter Base Voltage
I
C
Collector Current Continuous
I
CM
Peak
I
EM
Emitter Current - Peak
I
BM
Base Current - Peak
Total power dissipation up to
T
amb
= 25
o
C
Storge Temperature
Junction Temperature
Thermal Resistance
From junction to ambient
P
tot
Tstg
Tj
R
th(j-a)
BC557
45
50
50
5
100
200
200
200
500
-55 to +150
150
250
BC558
30
30
30
5
UNITS
V
V
V
V
mA
mA
mA
mW
o
o
C
C
o
C/W
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BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics
(Ta=25
o
C unless otherwise specified)
SYMBOL TEST CONDITION
DESCRIPTION
I
C
= 2mA, I
B
= 0
Collector Emitter Voltage
V
CEO
BC556
BC557
BC558
BC556
BC557
BC558
MIN
TYP
MAX
65
45
30
80
50
30
5
15
4
0.20
0.20
0.20
UNITS
V
Collector Base Voltage
V
CBO
I
C
= 100uA, I
E
= 0
V
V
nA
uA
nA
nA
nA
uA
uA
uA
V
V
V
Emitter Base Voltage
Collector Cut off Current
Collector Cut off Current
BC556
BC557
BC558
BC556
BC557
BC558
V
EBO
I
CBO
I
CES
I
E
= 100uA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, Tj = 150
o
C
V
CE
= 80V
V
CE
= 50V
V
CE
= 30V
V
CE
= 80V, Tj = 125
o
C
V
CE
= 50V, Tj = 125
o
C
V
CE
= 30V, Tj = 125
o
C
I
C
= 2mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
VCE = 5V, I
C
= 10uA
A
B
C
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V
BE(on)
V
CE(Sat)
V
BE(Sat)
h
FE
0.55
0.66
0.09
0.25
0.70
0.90
90
150
270
15
15
15
4
4
4
0.70
0.82
0.30
0.65
VCE = 5V, I
C
= 2mA
BC556
BC557/BC558
A
B
C
75
75
110
200
420
180
290
500
120
200
400
475
800
220
450
800
VCE = 5V, I
C
= 100mA
A
B
C
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2 of 3
BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics
(Ta=25
o
C unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMICS CHARACTERISTICS
I
C
= 10mA, V
CE
= 5V, f = 100MH
Z
f
T
Transition Frequency
Collector output Capacitance
Noise Figure
Small Signal Current Gain
C
cbo
NF
h
fe
V
CB
= 10V, f = 1MH
Z
MIN
TYP
MAX
150
UNITS
MH
Z
6
2
VCE = 5V, I
C
= 0.2mA
R
S
= 2k ohm, f = 1KH
Z
, B= 200H
Z
10
pF
dB
V
CE
= 5V, I
C
= 2mA, f= 1kH
Z
A
B
C
220
330
600
Input Impedance
h
ie
V
CE
= 5V, I
C
= 2mA, f= 1kH
Z
A
B
C
1.6
3.2
6.0
2.7
4.5
8.7
1.5
2.0
3.0
18
30
60
4.5
8.5
15
k ohm
Voltage Feedback
h
re
V
CE
= 5V, I
C
= 2mA, f= 1kH
Z
A
B
C
x10
Output Admittance
h
oe
V
CE
= 5V, I
C
= 2mA, f= 1kH
Z
A
B
C
30
60
110
u MHO
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