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DTC124TE

Description
100mA / 50V Digital transistors (with built-in resistor)
CategoryDiscrete semiconductor    The transistor   
File Size133KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTC124TE Overview

100mA / 50V Digital transistors (with built-in resistor)

DTC124TE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
100mA / 50V Digital transistors
(with built-in resistor)
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTC124TM
0.2
1.2
0.32
(3)
DTC124TE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.2
0.22
0.4 0.4
0.8
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
Abbreviated symbol : 05
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
EIAJ : SC-75A
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 05
2.9
DTC124TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC124TKA
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.1Min.
(2)
(1)
0.65 0.65
1.3
0.15
0.95 0.95
0.15
1.9
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
Abbreviated symbol : 05
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Abbreviated symbol : 05
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=22kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
1/2
2009.06 - Rev.B

DTC124TE Related Products

DTC124TE DTC124TE_09 DTC124TM DTC124TUA DTC124TKA
Description 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor) 100mA / 50V Digital transistors (with built-in resistor)
Is it lead-free? Lead free - - Lead free Lead free
Is it Rohs certified? conform to - - conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 - - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli - - compli compli
ECCN code EAR99 - - EAR99 EAR99
Other features DIGITAL, BUILT IN BIAS RESISTOR - - DIGITAL, BUILT IN BIAS RESISTOR DIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A - - 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - - 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 - - 100 100
JESD-30 code R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 - - e1 e1
Number of components 1 - - 1 1
Number of terminals 3 - - 3 3
Maximum operating temperature 150 °C - - 150 °C 150 °C
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - - 260 260
Polarity/channel type NPN - - NPN NPN
Maximum power dissipation(Abs) 0.15 W - - 0.2 W 0.2 W
Certification status Not Qualified - - Not Qualified Not Qualified
surface mount YES - - YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING - - GULL WING GULL WING
Terminal location DUAL - - DUAL DUAL
Maximum time at peak reflow temperature 10 - - 10 10
transistor applications SWITCHING - - SWITCHING SWITCHING
Transistor component materials SILICON - - SILICON SILICON

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